Influence of gas ambient on charge writing at the LaAlO3/ SrTiO3 heterointerface

Haeri Kim, Seon Young Moon, Shin Ik Kim, Seung Hyub Baek, Ho Won Jang, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N 2(98%), air, N2, and O2. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O2 (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H 2/N2. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.

Original languageEnglish
Pages (from-to)14037-14042
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number16
StatePublished - 27 Aug 2014


  • ambient effect
  • carrier density
  • charge writing


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