Influence of gas ambient on charge writing at the LaAlO3/ SrTiO3 heterointerface

Haeri Kim; Seon Young Moon; Shin Ik Kim; Seung Hyub Baek; Ho Won Jang; Dong Wook Kim

doi:10.1021/am503367f

Influence of gas ambient on charge writing at the LaAlO₃/ SrTiO₃ heterointerface

Haeri Kim, Seon Young Moon, Shin Ik Kim, Seung Hyub Baek, Ho Won Jang, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO₃/SrTiO₃ (LAO/STO) heterointerface in several gas environments: H₂(2%)/N ₂(98%), air, N₂, and O₂. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O₂ (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H ₂/N₂. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.

Original language	English
Pages (from-to)	14037-14042
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	16
DOIs	https://doi.org/10.1021/am503367f
State	Published - 27 Aug 2014

Keywords

ambient effect
carrier density
charge writing

Access to Document

10.1021/am503367f

Cite this

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title = "Influence of gas ambient on charge writing at the LaAlO3/ SrTiO3 heterointerface",

abstract = "We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N 2(98%), air, N2, and O2. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O2 (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H 2/N2. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.",

keywords = "ambient effect, carrier density, charge writing",

author = "Haeri Kim and Moon, {Seon Young} and Kim, {Shin Ik} and Baek, {Seung Hyub} and Jang, {Ho Won} and Kim, {Dong Wook}",

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T1 - Influence of gas ambient on charge writing at the LaAlO3/ SrTiO3 heterointerface

AU - Kim, Haeri

AU - Moon, Seon Young

AU - Kim, Shin Ik

AU - Baek, Seung Hyub

AU - Jang, Ho Won

AU - Kim, Dong Wook

PY - 2014/8/27

Y1 - 2014/8/27

N2 - We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N 2(98%), air, N2, and O2. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O2 (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H 2/N2. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.

AB - We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N 2(98%), air, N2, and O2. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O2 (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H 2/N2. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.

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KW - carrier density

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