Inductively coupled plasma etching of (Ba,Sr)TiO3 thin films

H. M. Lee, D. C. Kim, W. Jo, K. Y. Kim

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Etching behaviors of (Ba,Sr)TiO3 (BST) thin films were studied by an inductively coupled plasma (ICP). Using Cl2 gas with Ar gas, etch rate of the BST thin films and their selectivity for SiO2 hard masks were systematically investigated over a wide range of gas mixing ratio and ICP power. The films were etched at rates of 400 Å/min using 20% of Cl2 flow and 80% of Ar flow under ambient pressure below 10 mTorr and at a reactive ion etch power of 150 W and at an ICP power of 700 W. Chemical analysis by Auger electron spectroscopy showed that postetch residues had Ba- and Sr-rich phases which were not found on the surface of the SiO2 hard mask. It was found that the residues of the BST films can be removed with the addition of SF6 gas in the etchant gas mixture.

Original languageEnglish
Pages (from-to)1891-1893
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - Jul 1998


Dive into the research topics of 'Inductively coupled plasma etching of (Ba,Sr)TiO3 thin films'. Together they form a unique fingerprint.

Cite this