Indirect probing of defects in unipolar resistive switching NiOx thin films by Ni K-edge resonant inelastic X-ray scattering

Ranju Jung; Soo Hyon Phark; Dong Wook Kim; Mary Upton; Diego Casa; Thomas Gog; Jungho Kim

doi:10.7567/APEX.8.021101

Indirect probing of defects in unipolar resistive switching NiO_x thin films by Ni K-edge resonant inelastic X-ray scattering

Ranju Jung, Soo Hyon Phark, Dong Wook Kim, Mary Upton, Diego Casa, Thomas Gog, Jungho Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present observations of the Ni K-edge resonant inelastic X-ray scattering (RIXS) in NiO_x thin films showing unipolar resistive switching (RS). The RIXS spectra of RS NiO_x thin films can be described in terms of crystal field (dd) and charge transfer (CT) excitations. We found distorted dd excitations in the films' pristine state before electroforming, and identical excitations for high and low resistance states after electroforming. This suggests that the RS property of NiO_x thin film is related to defects in pristine NiO_x films, and RS occurs in local nanosized spots too small to be detected by RIXS.

Original language	English
Pages (from-to)	21101
Number of pages	1
Journal	Applied Physics Express
Volume	8
Issue number	2
DOIs	https://doi.org/10.7567/APEX.8.021101
State	Published - 1 Feb 2015

Bibliographical note

Publisher Copyright:
© 2015 The Japan Society of Applied Physics

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10.7567/APEX.8.021101

Cite this

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title = "Indirect probing of defects in unipolar resistive switching NiOx thin films by Ni K-edge resonant inelastic X-ray scattering",

abstract = "We present observations of the Ni K-edge resonant inelastic X-ray scattering (RIXS) in NiOx thin films showing unipolar resistive switching (RS). The RIXS spectra of RS NiOx thin films can be described in terms of crystal field (dd) and charge transfer (CT) excitations. We found distorted dd excitations in the films' pristine state before electroforming, and identical excitations for high and low resistance states after electroforming. This suggests that the RS property of NiOx thin film is related to defects in pristine NiOx films, and RS occurs in local nanosized spots too small to be detected by RIXS.",

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AU - Jung, Ranju

AU - Phark, Soo Hyon

AU - Kim, Dong Wook

AU - Upton, Mary

AU - Casa, Diego

AU - Gog, Thomas

AU - Kim, Jungho

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We present observations of the Ni K-edge resonant inelastic X-ray scattering (RIXS) in NiOx thin films showing unipolar resistive switching (RS). The RIXS spectra of RS NiOx thin films can be described in terms of crystal field (dd) and charge transfer (CT) excitations. We found distorted dd excitations in the films' pristine state before electroforming, and identical excitations for high and low resistance states after electroforming. This suggests that the RS property of NiOx thin film is related to defects in pristine NiOx films, and RS occurs in local nanosized spots too small to be detected by RIXS.

AB - We present observations of the Ni K-edge resonant inelastic X-ray scattering (RIXS) in NiOx thin films showing unipolar resistive switching (RS). The RIXS spectra of RS NiOx thin films can be described in terms of crystal field (dd) and charge transfer (CT) excitations. We found distorted dd excitations in the films' pristine state before electroforming, and identical excitations for high and low resistance states after electroforming. This suggests that the RS property of NiOx thin film is related to defects in pristine NiOx films, and RS occurs in local nanosized spots too small to be detected by RIXS.

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