Abstract
The effects of Cd-doping on the thermoelectric properties of Sn 1-x Pb x Te are investigated and compared to the properties of the corresponding Sn 1-x Pb x Te solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn 1-x Pb x Te. A signifi cant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher fi gure of merit (ZT) for (Sn 1-x Pb x ) 0.97 Cd 0.03 Te than that of undoped Sn 1-x Pb x Te. The maximum ZT ( ̃ 0.7) values are observed for p-type material with x = 0.36 at 560 K. Much higher values (ZT ̃ 1.2 at 560 K for x = 0.73) are obtained on n-type samples.
Original language | English |
---|---|
Pages (from-to) | 1218-1225 |
Number of pages | 8 |
Journal | Advanced Energy Materials |
Volume | 2 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2012 |