Thin films of Ga0.6Fe1.4O3 show ferrimagnetism with a transition temperature at around 360 K but suffer from large charge conduction. Substituting Fe2+ with non-magnetic Mg2+ ions reduces the charge conduction but also lowers the magnetic transition temperature. Doping Ga0.6Fe1.4O3 thin films with magnetic Co2+ ions leads to a similar reduction in the charge conduction, which is significant by two orders of magnitude, and, on the other hand, does not lead to any modification of the ferrimagnetic transition. The remnant magnetization of the leakage currents free Co-doped Ga0.6Fe1.4O3 thin films is of 53 emu cm-3 at 300 K. These films, therefore, are promising materials with potential uses in magnetoelectric and multiferroic devices.
Bibliographical notePublisher Copyright:
© The Royal Society of Chemistry 2015.