In situ Raman studies of single-walled carbon nanotubes grown by local catalyst heating

S. Dittmer, N. Olofsson, J. Ek Weis, O. A. Nerushev, A. V. Gromov, E. E.B. Campbell

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 °C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.

Original languageEnglish
Pages (from-to)206-210
Number of pages5
JournalChemical Physics Letters
Volume457
Issue number1-3
DOIs
StatePublished - 20 May 2008

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