In situ Raman studies of single-walled carbon nanotubes grown by local catalyst heating

S. Dittmer; N. Olofsson; J. Ek Weis; O. A. Nerushev; A. V. Gromov; E. E.B. Campbell

doi:10.1016/j.cplett.2008.04.008

In situ Raman studies of single-walled carbon nanotubes grown by local catalyst heating

S. Dittmer, N. Olofsson, J. Ek Weis, O. A. Nerushev, A. V. Gromov, E. E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 °C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.

Original language	English
Pages (from-to)	206-210
Number of pages	5
Journal	Chemical Physics Letters
Volume	457
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2008.04.008
State	Published - 20 May 2008

Bibliographical note

Funding Information:
The authors thank Lena Falk and Shantenu Mudgal for help with the TEM studies. Financial support from the Swedish Research Council, the Swedish Strategic Research Foundation (SSF) and from the EU via the NANORF STREP project is gratefully acknowledged. This paper reflects the views of the authors and not necessarily those of the EC. The community is not liable for any use that may be made of the information contained herein.

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10.1016/j.cplett.2008.04.008

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title = "In situ Raman studies of single-walled carbon nanotubes grown by local catalyst heating",

abstract = "Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 °C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.",

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AU - Gromov, A. V.

AU - Campbell, E. E.B.

N1 - Funding Information: The authors thank Lena Falk and Shantenu Mudgal for help with the TEM studies. Financial support from the Swedish Research Council, the Swedish Strategic Research Foundation (SSF) and from the EU via the NANORF STREP project is gratefully acknowledged. This paper reflects the views of the authors and not necessarily those of the EC. The community is not liable for any use that may be made of the information contained herein.

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Y1 - 2008/5/20

N2 - Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 °C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.

AB - Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 °C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.

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In situ Raman studies of single-walled carbon nanotubes grown by local catalyst heating

Abstract

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