Abstract
The development of organic photovoltaic (OPV) devices based on non-fullerene acceptors (NFAs) has led to a rapid improvement in their efficiency. Despite these improvements, significant performance degradation in the early stages of operation, known as burn-in, remains a challenge for NFA-based OPVs. To address this challenge, this study demonstrates a stable NFA-based OPV fabricated using sequential deposition (SqD) and a quasi-orthogonal solvent. The quasi-orthogonal solvent, which is prepared by incorporating 1-chloronaphthalene (1-CN) into dichloromethane (DCM), reduces the vapor pressure of the solvent and allows for the efficient dissolution and penetration of the Y6 (one of efficient NFAs) into a PM6 polymer-donor layer without damaging the latter. The resulting bulk heterojunction (BHJ) is characterized by a higher degree of crystallinity in the PM6 domains than that prepared using a conventional single-step deposition (SD) process. The OPV fabricated using the SqD process exhibits a PCE of 14.1% and demonstrates superior thermal stability to the SD-processed OPV. This study conclusively reveals that the formation of a thermally stable interface between the photoactive layer and the electron-transport layer (ETL) is the primary factor contributing to the high thermal stability observed in the SqD-processed OPV.
Original language | English |
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Pages (from-to) | 20151-20158 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 15 |
Issue number | 16 |
DOIs | |
State | Published - 26 Apr 2023 |
Bibliographical note
Publisher Copyright:© 2023 American Chemical Society.
Keywords
- burn-in free organic photovoltaic device
- non-fullerene acceptor
- organic photovoltaic device stability
- photoactive layer/electrode interface
- sequential deposition process