Abstract
Low operation power and high endurance of resistive random access memory (RRAM) as a synaptic device are critical parameters for in-memory computing applications. Yet, high power consumption and reliability issue of silicon bottom electrode (BE) RRAM hinder its commercialization as a synaptic device. In this experiment, we report on the improvement of switching characteristics of silicon BE nanowedge RRAM via the Nickel (Ni) silicidation process. Existing highly doped Si-BE forms a SiO2 interfacial layer (IL) during a switching layer deposition and increases an effective thickness, leading to increased voltage drop within the RRAM device and large cycle-to-cycle variations. By siliciding the Si-BE with Ni, the issue of IL formation is removed and the resistance of metallic NiSi BE is further reduced compared to Arsenic (As+) doped Si BE. Both dc and ac analyses of the fabricated NiSi-BE nanowedge RRAM have shown the reduction of overshoot and switching current down to 55% of the original value. Transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS) analysis convinced the formation of NiSi BE. In addition, gradual switching characteristics, uniform low resistance state (LRS), and better endurance of NiSi-BE nanowedge RRAM enable the Si compatible approach to fabricate a large-size RRAM cross-point array for utilization in hardware-implemented neuromorphic computing applications.
Original language | English |
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Article number | 9293139 |
Pages (from-to) | 438-442 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2021 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
Keywords
- Endurance
- interfacial layer (IL)
- nanowedge resistive random access memory (RRAM)
- neuromorphic application
- nickel silicidation
- synaptic device