Improvement of characteristics with a sub-5 nm ge-doped silicon nitride layer in charge trap flash memory cells

  • Dong Hua Li
  • , Wandong Kim
  • , Won Bo Shim
  • , Se Hwan Park
  • , Yoon Kim
  • , Gil Sung Lee
  • , Doo Hyun Kim
  • , Jung Hoon Lee
  • , Jang Gn Yun
  • , Seongjae Cho
  • , Il Han Park
  • , Jong Ho Lee
  • , Hyungcheol Shin
  • , Byung Gook Park

Research output: Contribution to journal › Article › peer-review

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