Improved Outcoupling Efficiency and Stability of Perovskite Light-Emitting Diodes using Thin Emitting Layers

Lianfeng Zhao; Kyung Min Lee; Kwangdong Roh; Saeed Uz Zaman Khan; Barry P. Rand

doi:10.1002/adma.201805836

Improved Outcoupling Efficiency and Stability of Perovskite Light-Emitting Diodes using Thin Emitting Layers

Lianfeng Zhao, Kyung Min Lee, Kwangdong Roh, Saeed Uz Zaman Khan, Barry P. Rand

Department of Physics

Research output: Contribution to journal › Article › peer-review

232 Scopus citations

Abstract

Hybrid organic–inorganic perovskite semiconductors have shown potential to develop into a new generation of light-emitting diode (LED) technology. Herein, an important design principle for perovskite LEDs is elucidated regarding optimal perovskite thickness. Adopting a thin perovskite layer in the range of 35–40 nm is shown to be critical for both device efficiency and stability improvements. Maximum external quantum efficiencies (EQEs) of 17.6% for Cs_0.2FA_0.8PbI_2.8Br_0.2, 14.3% for CH₃NH₃PbI₃ (MAPbI₃), 10.1% for formamidinium lead iodide (FAPbI₃), and 11.3% for formamidinium lead bromide (FAPbBr₃)-based LEDs are demonstrated with optimized perovskite layer thickness. Optical simulations show that the improved EQEs source from improved light outcoupling. Furthermore, elevated device temperature caused by Joule heating is shown as an important factor contributing to device degradation, and that thin perovskite emitting layers maintain lower junction temperature during operation and thus demonstrate increased stability.

Original language	English
Article number	1805836
Journal	Advanced Materials
Volume	31
Issue number	2
DOIs	https://doi.org/10.1002/adma.201805836
State	Published - 11 Jan 2019

Bibliographical note

Funding Information:
This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0037 and the ONR Young Investigator Program under Award No. N00014-17-1-2005.

Funding Information:
The authors would like to thank Prof. Claire Gmachl and Alexandra Werth for providing the thermal imaging camera, and Prof. Noel C. Giebink and Hoyeon Kim for helpful discussions on junction temperature extraction. This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0037 and the ONR Young Investigator Program under Award No. N00014-17-1-2005.

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

Joule heating
light outcoupling
organic–inorganic hybrid perovskites
perovskite light-emitting devices
thermal management

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10.1002/adma.201805836

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title = "Improved Outcoupling Efficiency and Stability of Perovskite Light-Emitting Diodes using Thin Emitting Layers",

abstract = "Hybrid organic–inorganic perovskite semiconductors have shown potential to develop into a new generation of light-emitting diode (LED) technology. Herein, an important design principle for perovskite LEDs is elucidated regarding optimal perovskite thickness. Adopting a thin perovskite layer in the range of 35–40 nm is shown to be critical for both device efficiency and stability improvements. Maximum external quantum efficiencies (EQEs) of 17.6% for Cs0.2FA0.8PbI2.8Br0.2, 14.3% for CH3NH3PbI3 (MAPbI3), 10.1% for formamidinium lead iodide (FAPbI3), and 11.3% for formamidinium lead bromide (FAPbBr3)-based LEDs are demonstrated with optimized perovskite layer thickness. Optical simulations show that the improved EQEs source from improved light outcoupling. Furthermore, elevated device temperature caused by Joule heating is shown as an important factor contributing to device degradation, and that thin perovskite emitting layers maintain lower junction temperature during operation and thus demonstrate increased stability.",

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note = "Funding Information: This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0037 and the ONR Young Investigator Program under Award No. N00014-17-1-2005. Funding Information: The authors would like to thank Prof. Claire Gmachl and Alexandra Werth for providing the thermal imaging camera, and Prof. Noel C. Giebink and Hoyeon Kim for helpful discussions on junction temperature extraction. This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0037 and the ONR Young Investigator Program under Award No. N00014-17-1-2005. Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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N2 - Hybrid organic–inorganic perovskite semiconductors have shown potential to develop into a new generation of light-emitting diode (LED) technology. Herein, an important design principle for perovskite LEDs is elucidated regarding optimal perovskite thickness. Adopting a thin perovskite layer in the range of 35–40 nm is shown to be critical for both device efficiency and stability improvements. Maximum external quantum efficiencies (EQEs) of 17.6% for Cs0.2FA0.8PbI2.8Br0.2, 14.3% for CH3NH3PbI3 (MAPbI3), 10.1% for formamidinium lead iodide (FAPbI3), and 11.3% for formamidinium lead bromide (FAPbBr3)-based LEDs are demonstrated with optimized perovskite layer thickness. Optical simulations show that the improved EQEs source from improved light outcoupling. Furthermore, elevated device temperature caused by Joule heating is shown as an important factor contributing to device degradation, and that thin perovskite emitting layers maintain lower junction temperature during operation and thus demonstrate increased stability.

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Improved Outcoupling Efficiency and Stability of Perovskite Light-Emitting Diodes using Thin Emitting Layers

Abstract

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Keywords

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