Improved gradual reset phenomenon in SiNx-based RRAM by diode-connected structure

Min Hwi Kim; Suhyun Bang; Tae Hyeon Kim; Dong Keun Lee; Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.23919/SNW.2019.8782935

Improved gradual reset phenomenon in SiN_x-based RRAM by diode-connected structure

Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we have confirmed that dependent reset switching phenomenon of SiN_x/SiO₂ RRAM is dependent on stop voltage (V_STOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.

Original language	English
Title of host publication	2019 Silicon Nanoelectronics Workshop, SNW 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487024
DOIs	https://doi.org/10.23919/SNW.2019.8782935
State	Published - Jun 2019
Event	24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan Duration: 9 Jun 2019 → 10 Jun 2019

Publication series

Name	2019 Silicon Nanoelectronics Workshop, SNW 2019

Conference

Conference	24th Silicon Nanoelectronics Workshop, SNW 2019
Country/Territory	Japan
City	Kyoto
Period	9/06/19 → 10/06/19

Access to Document

10.23919/SNW.2019.8782935

Cite this

Kim, M. H., Bang, S., Kim, T. H., Lee, D. K., Kim, S., Cho, S., & Park, B. G. (2019). Improved gradual reset phenomenon in SiN_x-based RRAM by diode-connected structure. In 2019 Silicon Nanoelectronics Workshop, SNW 2019 Article 8782935 (2019 Silicon Nanoelectronics Workshop, SNW 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2019.8782935

@inproceedings{6fc7bc69e2a249afbd5e5129a1c10b8b,

title = "Improved gradual reset phenomenon in SiNx-based RRAM by diode-connected structure",

abstract = "In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.",

author = "Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",

note = "Funding Information: This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2018R1A2A1A05023517) and in part by the Brain Korea 21 Plus Project. Publisher Copyright: {\textcopyright} 2019 JSAP.; 24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",

year = "2019",

month = jun,

doi = "10.23919/SNW.2019.8782935",

language = "English",

series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",

}

Kim, MH, Bang, S, Kim, TH, Lee, DK, Kim, S, Cho, S & Park, BG 2019, Improved gradual reset phenomenon in SiN_x-based RRAM by diode-connected structure. in 2019 Silicon Nanoelectronics Workshop, SNW 2019., 8782935, 2019 Silicon Nanoelectronics Workshop, SNW 2019, Institute of Electrical and Electronics Engineers Inc., 24th Silicon Nanoelectronics Workshop, SNW 2019, Kyoto, Japan, 9/06/19. https://doi.org/10.23919/SNW.2019.8782935

Improved gradual reset phenomenon in SiN_x-based RRAM by diode-connected structure. / Kim, Min Hwi; Bang, Suhyun; Kim, Tae Hyeon et al.
2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8782935 (2019 Silicon Nanoelectronics Workshop, SNW 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved gradual reset phenomenon in SiNx-based RRAM by diode-connected structure

AU - Kim, Min Hwi

AU - Bang, Suhyun

AU - Kim, Tae Hyeon

AU - Lee, Dong Keun

AU - Kim, Sungjun

AU - Cho, Seongjae

AU - Park, Byung Gook

N1 - Funding Information: This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2018R1A2A1A05023517) and in part by the Brain Korea 21 Plus Project. Publisher Copyright: © 2019 JSAP.

PY - 2019/6

Y1 - 2019/6

N2 - In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.

AB - In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.

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M3 - Conference contribution

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T3 - 2019 Silicon Nanoelectronics Workshop, SNW 2019

BT - 2019 Silicon Nanoelectronics Workshop, SNW 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th Silicon Nanoelectronics Workshop, SNW 2019

Y2 - 9 June 2019 through 10 June 2019

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