TY - GEN
T1 - Improved gradual reset phenomenon in SiNx-based RRAM by diode-connected structure
AU - Kim, Min Hwi
AU - Bang, Suhyun
AU - Kim, Tae Hyeon
AU - Lee, Dong Keun
AU - Kim, Sungjun
AU - Cho, Seongjae
AU - Park, Byung Gook
N1 - Funding Information:
This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2018R1A2A1A05023517) and in part by the Brain Korea 21 Plus Project.
Publisher Copyright:
© 2019 JSAP.
PY - 2019/6
Y1 - 2019/6
N2 - In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.
AB - In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.
UR - http://www.scopus.com/inward/record.url?scp=85070865974&partnerID=8YFLogxK
U2 - 10.23919/SNW.2019.8782935
DO - 10.23919/SNW.2019.8782935
M3 - Conference contribution
AN - SCOPUS:85070865974
T3 - 2019 Silicon Nanoelectronics Workshop, SNW 2019
BT - 2019 Silicon Nanoelectronics Workshop, SNW 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th Silicon Nanoelectronics Workshop, SNW 2019
Y2 - 9 June 2019 through 10 June 2019
ER -