Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

B. H. Park, S. J. Hyun, C. R. Moon, Byung Doo Choe, J. Lee, C. Y. Kim, W. Jo, T. W. Noh

Research output: Contribution to journalArticlepeer-review

61 Scopus citations

Abstract

Epitaxial Bi4Ti3O12 (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization-voltage measurements revealed strong imprint failures and current-voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance-voltage (C-V) measurements were performed. By fitting the C-V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials.

Original languageEnglish
Pages (from-to)4428-4435
Number of pages8
JournalJournal of Applied Physics
Volume84
Issue number8
DOIs
StatePublished - 15 Oct 1998

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