Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

B. H. Park; S. J. Hyun; C. R. Moon; Byung Doo Choe; J. Lee; C. Y. Kim; W. Jo; T. W. Noh

doi:10.1063/1.368666

Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi₄Ti₃O₁₂ thin films

B. H. Park, S. J. Hyun, C. R. Moon, Byung Doo Choe, J. Lee, C. Y. Kim, W. Jo, T. W. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Epitaxial Bi₄Ti₃O₁₂ (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization-voltage measurements revealed strong imprint failures and current-voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance-voltage (C-V) measurements were performed. By fitting the C-V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials.

Original language	English
Pages (from-to)	4428-4435
Number of pages	8
Journal	Journal of Applied Physics
Volume	84
Issue number	8
DOIs	https://doi.org/10.1063/1.368666
State	Published - 15 Oct 1998

Access to Document

10.1063/1.368666

Cite this

@article{ae0df96b8c274b25ae53d6678e5a7bd1,

title = "Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films",

abstract = "Epitaxial Bi4Ti3O12 (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization-voltage measurements revealed strong imprint failures and current-voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance-voltage (C-V) measurements were performed. By fitting the C-V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials.",

author = "Park, {B. H.} and Hyun, {S. J.} and Moon, {C. R.} and Choe, {Byung Doo} and J. Lee and Kim, {C. Y.} and W. Jo and Noh, {T. W.}",

year = "1998",

month = oct,

day = "15",

doi = "10.1063/1.368666",

language = "English",

volume = "84",

pages = "4428--4435",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

AU - Park, B. H.

AU - Hyun, S. J.

AU - Moon, C. R.

AU - Choe, Byung Doo

AU - Lee, J.

AU - Kim, C. Y.

AU - Jo, W.

AU - Noh, T. W.

PY - 1998/10/15

Y1 - 1998/10/15

N2 - Epitaxial Bi4Ti3O12 (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization-voltage measurements revealed strong imprint failures and current-voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance-voltage (C-V) measurements were performed. By fitting the C-V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials.

AB - Epitaxial Bi4Ti3O12 (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization-voltage measurements revealed strong imprint failures and current-voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance-voltage (C-V) measurements were performed. By fitting the C-V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials.

UR - http://www.scopus.com/inward/record.url?scp=0345240752&partnerID=8YFLogxK

U2 - 10.1063/1.368666

DO - 10.1063/1.368666

M3 - Article

AN - SCOPUS:0345240752

SN - 0021-8979

VL - 84

SP - 4428

EP - 4435

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

Abstract

Access to Document

Fingerprint

Cite this

Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi₄Ti₃O₁₂ thin films