Impact of velocity saturation region on nMOSFET's hot carrier reliability at elevated temperatures

Hyunsang Hwang, Jung Suk Goo, Hoyup Kwon, Hyungsoon Shin

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

An anomalous behavior of nMOSFET's hot carrier reliability characteristics has been investigated at an elevated temperature for the first time. Although the degradation of linear drain current is significantly reduced with increasing stress temperature, the degradation of saturation drain current is enhanced for high temperature stress. This behavior can be explained by the reduction of the velocity saturation length at an elevated temperature, which increases the net amount of interface states that can influence the channel current. This anomalous behavior causes a significant impact on the device reliability for future deep submicron devices at high operating temperatures.

Original languageEnglish
Pages (from-to)48-50
Number of pages3
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1995
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 4 Apr 19956 Apr 1995

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