TY - JOUR
T1 - Impact of velocity saturation region on nMOSFET's hot carrier reliability at elevated temperatures
AU - Hwang, Hyunsang
AU - Goo, Jung Suk
AU - Kwon, Hoyup
AU - Shin, Hyungsoon
PY - 1995
Y1 - 1995
N2 - An anomalous behavior of nMOSFET's hot carrier reliability characteristics has been investigated at an elevated temperature for the first time. Although the degradation of linear drain current is significantly reduced with increasing stress temperature, the degradation of saturation drain current is enhanced for high temperature stress. This behavior can be explained by the reduction of the velocity saturation length at an elevated temperature, which increases the net amount of interface states that can influence the channel current. This anomalous behavior causes a significant impact on the device reliability for future deep submicron devices at high operating temperatures.
AB - An anomalous behavior of nMOSFET's hot carrier reliability characteristics has been investigated at an elevated temperature for the first time. Although the degradation of linear drain current is significantly reduced with increasing stress temperature, the degradation of saturation drain current is enhanced for high temperature stress. This behavior can be explained by the reduction of the velocity saturation length at an elevated temperature, which increases the net amount of interface states that can influence the channel current. This anomalous behavior causes a significant impact on the device reliability for future deep submicron devices at high operating temperatures.
UR - http://www.scopus.com/inward/record.url?scp=0029213226&partnerID=8YFLogxK
U2 - 10.1109/irps.1995.363334
DO - 10.1109/irps.1995.363334
M3 - Conference article
AN - SCOPUS:0029213226
SN - 0099-9512
SP - 48
EP - 50
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
T2 - Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings
Y2 - 4 April 1995 through 6 April 1995
ER -