Abstract
We fabricated an indium gallium zinc oxide (IGZO) charge trap flash (CTF) device for logic-in-memory (LIM) applications. Initially, the nonvolatile memory characteristics of the IGZO CTF device were investigated under charge trapping and detrapping states in 104 s retention tests. Next, we constructed a common-source amplifier circuit containing the IGZO CTF device and demonstrated various input-output signal relationships by modulating the memory state of the device. Finally, we used interconnected IGZO CTF devices to demonstrate reconfigurable logic functions. Using series- and parallel-connected IGZO CTF devices, we developed 2-input NAND and 2-input NOR gates, respectively. Our experimental results showed that the IGZO CTF device is a promising future memory device and a tool for LIM technology.
Original language | English |
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Article number | 123501 |
Journal | Applied Physics Letters |
Volume | 124 |
Issue number | 12 |
DOIs | |
State | Published - 18 Mar 2024 |
Bibliographical note
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