TY - JOUR
T1 - Identifying the ground state structures of point defects in solids
AU - Mosquera-Lois, Irea
AU - Kavanagh, Seán R.
AU - Walsh, Aron
AU - Scanlon, David O.
N1 - Funding Information:
I.M.L. thanks La Caixa Foundation for funding a postgraduate scholarship (ID 100010434, fellowship code LCF/BQ/EU20/11810070). S.R.K. acknowledges the EPSRC Centre for Doctoral Training in the Advanced Characterisation of Materials (CDT-ACM)(EP/S023259/1) for funding a PhD studentship. DOS acknowledges support from the EPSRC (EP/N01572X/1) and from the European Research Council, ERC (Grant No. 758345). Via membership of the UK’s HEC Materials Chemistry Consortium, which is funded by the EPSRC (EP/L000202, EP/R029431, EP/T022213), this work used the UK Materials and Molecular Modelling (MMM) Hub (Thomas EP/P020194 and Young EP/T022213).
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - Point defects are a universal feature of crystals. Their identification is addressed by combining experimental measurements with theoretical models. The standard modelling approach is, however, prone to missing the ground state atomic configurations associated with energy-lowering reconstructions from the idealised crystallographic environment. Missed ground states compromise the accuracy of calculated properties. To address this issue, we report an approach to navigate the defect configurational landscape using targeted bond distortions and rattling. Application of our workflow to eight materials (CdTe, GaAs, Sb2S3, Sb2Se3, CeO2, In2O3, ZnO, anatase-TiO2) reveals symmetry breaking in each host crystal that is not found via conventional local minimisation techniques. The point defect distortions are classified by the associated physico-chemical factors. We demonstrate the impact of these defect distortions on derived properties, including formation energies, concentrations and charge transition levels. Our work presents a step forward for quantitative modelling of imperfect solids.
AB - Point defects are a universal feature of crystals. Their identification is addressed by combining experimental measurements with theoretical models. The standard modelling approach is, however, prone to missing the ground state atomic configurations associated with energy-lowering reconstructions from the idealised crystallographic environment. Missed ground states compromise the accuracy of calculated properties. To address this issue, we report an approach to navigate the defect configurational landscape using targeted bond distortions and rattling. Application of our workflow to eight materials (CdTe, GaAs, Sb2S3, Sb2Se3, CeO2, In2O3, ZnO, anatase-TiO2) reveals symmetry breaking in each host crystal that is not found via conventional local minimisation techniques. The point defect distortions are classified by the associated physico-chemical factors. We demonstrate the impact of these defect distortions on derived properties, including formation energies, concentrations and charge transition levels. Our work presents a step forward for quantitative modelling of imperfect solids.
UR - http://www.scopus.com/inward/record.url?scp=85148327570&partnerID=8YFLogxK
U2 - 10.1038/s41524-023-00973-1
DO - 10.1038/s41524-023-00973-1
M3 - Article
AN - SCOPUS:85148327570
SN - 2057-3960
VL - 9
JO - npj Computational Materials
JF - npj Computational Materials
IS - 1
M1 - 25
ER -