TY - JOUR
T1 - Identification and Dynamics of Microsecond Long-Lived Charge Carriers for CsPbBr3 Perovskite Quantum Dots, Featuring Ambient Long-Term Stability
AU - Cho, Kayoung
AU - Park, Youmin
AU - Jo, Hyeonyeong
AU - Seo, Sumi
AU - Moon, Jiyoung
AU - Lee, Soo Jeong
AU - Park, Seong Yeon
AU - Yoon, Seog Joon
AU - Park, Jae Hong
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/5/30
Y1 - 2024/5/30
N2 - We analyze the stability and photophysical dynamics of CsPbBr3 perovskite quantum dots (PeQDs), fabricated under mild synthetic conditions and embedded in an amorphous silica (SiOx) matrix (CsPbBr3@SiOx), underscoring their sustained performance in ambient conditions for over 300 days with minimal optical degradation. However, this stability comes at the cost of a reduced photoluminescence efficiency. Time-resolved spectroscopic analyses, including flash-photolysis time-resolved microwave conductivity and time-resolved photoluminescence, show that excitons in CsPbBr3@SiOx films decay within 2.5 ns, while charge carriers recombine over approximately 230 ns. This longevity of the charge carriers is due to photoinduced electron transfer to the SiOx matrix, enabling hole retention. The measured hole mobility in these PeQDs is 0.880 cm2 V-1 s-1, underscoring their potential in optoelectronic applications. This study highlights the role of the silica matrix in enhancing the durability of PeQDs in humid environments and modifying exciton dynamics and photoluminescence, providing valuable insights for developing robust optoelectronic materials.
AB - We analyze the stability and photophysical dynamics of CsPbBr3 perovskite quantum dots (PeQDs), fabricated under mild synthetic conditions and embedded in an amorphous silica (SiOx) matrix (CsPbBr3@SiOx), underscoring their sustained performance in ambient conditions for over 300 days with minimal optical degradation. However, this stability comes at the cost of a reduced photoluminescence efficiency. Time-resolved spectroscopic analyses, including flash-photolysis time-resolved microwave conductivity and time-resolved photoluminescence, show that excitons in CsPbBr3@SiOx films decay within 2.5 ns, while charge carriers recombine over approximately 230 ns. This longevity of the charge carriers is due to photoinduced electron transfer to the SiOx matrix, enabling hole retention. The measured hole mobility in these PeQDs is 0.880 cm2 V-1 s-1, underscoring their potential in optoelectronic applications. This study highlights the role of the silica matrix in enhancing the durability of PeQDs in humid environments and modifying exciton dynamics and photoluminescence, providing valuable insights for developing robust optoelectronic materials.
UR - http://www.scopus.com/inward/record.url?scp=85194282461&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.4c01024
DO - 10.1021/acs.jpclett.4c01024
M3 - Article
C2 - 38780120
AN - SCOPUS:85194282461
SN - 1948-7185
VL - 15
SP - 5795
EP - 5803
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 21
ER -