Abstract
Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation. The results show that decomposition and oxidation of carbon is more substantial than metal hydroxides, leading to the elimination of organic residues, correlated to a low interface trap density (S.S. = 0.45 V dec-1, NT = 1.11 × 1012 cm-2) in the device. The resultant HRA indium oxide TFTs exhibit improved electrical characteristics such as the mobility, the on/off current ratio, and the subthreshold swing as well as bias stabilities under PBS and NBS conditions.
Original language | English |
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Pages (from-to) | 7499-7505 |
Number of pages | 7 |
Journal | Journal of Materials Chemistry C |
Volume | 3 |
Issue number | 28 |
DOIs | |
State | Published - 28 Jul 2015 |
Bibliographical note
Publisher Copyright:© The Royal Society of Chemistry.