Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

Taehee Kim; Jin Young Choi; Jun Hong Jeon; Youn Su Kim; Bong Soo Kim; Doh Kwon Lee; Honggon Kim; Seunghee Han; Kyungkon Kim

doi:10.1016/j.materresbull.2012.04.119

Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

Taehee Kim, Jin Young Choi, Jun Hong Jeon, Youn Su Kim, Bong Soo Kim, Doh Kwon Lee, Honggon Kim, Seunghee Han, Kyungkon Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V _OC = 1.041 V, J _SC = 2.97 mA/cm ², FF = 32.3%) to 2.6% (V _OC = 1.336 V, J _SC = 4.65 mA/cm ², FF = 41.98%) due to the eliminated interfacial series resistance.

Original language	English
Pages (from-to)	3040-3043
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.119
State	Published - Oct 2012

Bibliographical note

Funding Information:
This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea , funded by the Ministry of Education, Science and Technology and by KRCF (Korea Research Council of Fundamental Science & Technology) and KIST (Korea Institute of Science & Technology) for “NAP (National Agenda Project) program”.

Keywords

A. Amorphous materials
A. Electronic materials
A. Interfaces
B. Plasma deposition
B. Sputtering

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@article{2458e8e97d3240a28d02ffe5768531f0,

title = "Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer",

abstract = "We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V OC = 1.041 V, J SC = 2.97 mA/cm 2, FF = 32.3%) to 2.6% (V OC = 1.336 V, J SC = 4.65 mA/cm 2, FF = 41.98%) due to the eliminated interfacial series resistance.",

keywords = "A. Amorphous materials, A. Electronic materials, A. Interfaces, B. Plasma deposition, B. Sputtering",

author = "Taehee Kim and Choi, {Jin Young} and Jeon, {Jun Hong} and Kim, {Youn Su} and Kim, {Bong Soo} and Lee, {Doh Kwon} and Honggon Kim and Seunghee Han and Kyungkon Kim",

note = "Funding Information: This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea , funded by the Ministry of Education, Science and Technology and by KRCF (Korea Research Council of Fundamental Science & Technology) and KIST (Korea Institute of Science & Technology) for “NAP (National Agenda Project) program”.",

year = "2012",

month = oct,

doi = "10.1016/j.materresbull.2012.04.119",

language = "English",

volume = "47",

pages = "3040--3043",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd.",

number = "10",

}

TY - JOUR

T1 - Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

AU - Kim, Taehee

AU - Choi, Jin Young

AU - Jeon, Jun Hong

AU - Kim, Youn Su

AU - Kim, Bong Soo

AU - Lee, Doh Kwon

AU - Kim, Honggon

AU - Han, Seunghee

AU - Kim, Kyungkon

N1 - Funding Information: This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea , funded by the Ministry of Education, Science and Technology and by KRCF (Korea Research Council of Fundamental Science & Technology) and KIST (Korea Institute of Science & Technology) for “NAP (National Agenda Project) program”.

PY - 2012/10

Y1 - 2012/10

N2 - We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V OC = 1.041 V, J SC = 2.97 mA/cm 2, FF = 32.3%) to 2.6% (V OC = 1.336 V, J SC = 4.65 mA/cm 2, FF = 41.98%) due to the eliminated interfacial series resistance.

AB - We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V OC = 1.041 V, J SC = 2.97 mA/cm 2, FF = 32.3%) to 2.6% (V OC = 1.336 V, J SC = 4.65 mA/cm 2, FF = 41.98%) due to the eliminated interfacial series resistance.

KW - A. Amorphous materials

KW - A. Electronic materials

KW - A. Interfaces

KW - B. Plasma deposition

KW - B. Sputtering

UR - http://www.scopus.com/inward/record.url?scp=84866323688&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2012.04.119

DO - 10.1016/j.materresbull.2012.04.119

M3 - Article

AN - SCOPUS:84866323688

SN - 0025-5408

VL - 47

SP - 3040

EP - 3043

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

Abstract

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Keywords

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