TY - JOUR
T1 - Hybrid Silicon-Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High-Performance and Bias-Switchable Multi-Functionality
AU - Kim, Hyeonghun
AU - Zhang, Yuxuan
AU - Rothschild, Molly
AU - Roh, Kwangdong
AU - Kim, Yunseok
AU - Jang, Ho Seong
AU - Min, Byung Cheol
AU - Lee, Sunghwan
N1 - Publisher Copyright:
© 2022 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
PY - 2022/7/18
Y1 - 2022/7/18
N2 - Black silicon (b-Si) featured by anti-reflective surfaces is extensively studied to realize highly sensitive photodetectors. The key to augmenting the light-detection capability of b-Si is to facilitate charge extraction while limiting undesired recombination events at surface defects. To this end, oxidative chemical vapor deposition (oCVD) is leveraged to form a highly conformal and conductive (3000 S cm−1) organic transport layer, poly(3,4-ethylenedioxythiophene) (PEDOT), on b-Si nanostructures. The oCVD PEDOT instrumentally extracts photo-induced charges, through which b-Si photodetectors implementing oCVD PEDOT achieve a superior photo-detectivity of 1.37 × 1013 Jones. Furthermore, by engineering the pore dimension of b-Si, a mode-tunable Si photodetector is contrived, where the functions of broad-band and visible-blinded modes are switched facile by a bias polarity. The unprecedented device paves the way for extending the applications of Si detectors toward novel sensory platforms such as night-vision, motion tracking, and bio-sensing.
AB - Black silicon (b-Si) featured by anti-reflective surfaces is extensively studied to realize highly sensitive photodetectors. The key to augmenting the light-detection capability of b-Si is to facilitate charge extraction while limiting undesired recombination events at surface defects. To this end, oxidative chemical vapor deposition (oCVD) is leveraged to form a highly conformal and conductive (3000 S cm−1) organic transport layer, poly(3,4-ethylenedioxythiophene) (PEDOT), on b-Si nanostructures. The oCVD PEDOT instrumentally extracts photo-induced charges, through which b-Si photodetectors implementing oCVD PEDOT achieve a superior photo-detectivity of 1.37 × 1013 Jones. Furthermore, by engineering the pore dimension of b-Si, a mode-tunable Si photodetector is contrived, where the functions of broad-band and visible-blinded modes are switched facile by a bias polarity. The unprecedented device paves the way for extending the applications of Si detectors toward novel sensory platforms such as night-vision, motion tracking, and bio-sensing.
KW - black silicon
KW - multimodal detection
KW - oxidative chemical vapor deposition
KW - photodetector
KW - poly(3,4-ethylene dioxythiophene)
UR - http://www.scopus.com/inward/record.url?scp=85128767116&partnerID=8YFLogxK
U2 - 10.1002/adfm.202201641
DO - 10.1002/adfm.202201641
M3 - Article
AN - SCOPUS:85128767116
SN - 1616-301X
VL - 32
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 29
M1 - 2201641
ER -