TY - JOUR
T1 - Hybrid Silicon-Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High-Performance and Bias-Switchable Multi-Functionality
AU - Kim, Hyeonghun
AU - Zhang, Yuxuan
AU - Rothschild, Molly
AU - Roh, Kwangdong
AU - Kim, Yunseok
AU - Jang, Ho Seong
AU - Min, Byung Cheol
AU - Lee, Sunghwan
N1 - Funding Information:
S.L., B.‐C.M., and H.K. conceived the study. H.K., Y.Z., and R.M. prepared the materials and devices. H.K. performed the measurements. Y.Z. conducted DFT calculation. H.K., K.R., Y.K., and H.S.J. conducted material characterizations. S.L., B.‐C.M., and H.K. analyzed the data and wrote the manuscript. This work was partially supported by the U.S. National Science Foundation (NSF) Award No. ECCS‐1931088.
Publisher Copyright:
© 2022 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
PY - 2022/7/18
Y1 - 2022/7/18
N2 - Black silicon (b-Si) featured by anti-reflective surfaces is extensively studied to realize highly sensitive photodetectors. The key to augmenting the light-detection capability of b-Si is to facilitate charge extraction while limiting undesired recombination events at surface defects. To this end, oxidative chemical vapor deposition (oCVD) is leveraged to form a highly conformal and conductive (3000 S cm−1) organic transport layer, poly(3,4-ethylenedioxythiophene) (PEDOT), on b-Si nanostructures. The oCVD PEDOT instrumentally extracts photo-induced charges, through which b-Si photodetectors implementing oCVD PEDOT achieve a superior photo-detectivity of 1.37 × 1013 Jones. Furthermore, by engineering the pore dimension of b-Si, a mode-tunable Si photodetector is contrived, where the functions of broad-band and visible-blinded modes are switched facile by a bias polarity. The unprecedented device paves the way for extending the applications of Si detectors toward novel sensory platforms such as night-vision, motion tracking, and bio-sensing.
AB - Black silicon (b-Si) featured by anti-reflective surfaces is extensively studied to realize highly sensitive photodetectors. The key to augmenting the light-detection capability of b-Si is to facilitate charge extraction while limiting undesired recombination events at surface defects. To this end, oxidative chemical vapor deposition (oCVD) is leveraged to form a highly conformal and conductive (3000 S cm−1) organic transport layer, poly(3,4-ethylenedioxythiophene) (PEDOT), on b-Si nanostructures. The oCVD PEDOT instrumentally extracts photo-induced charges, through which b-Si photodetectors implementing oCVD PEDOT achieve a superior photo-detectivity of 1.37 × 1013 Jones. Furthermore, by engineering the pore dimension of b-Si, a mode-tunable Si photodetector is contrived, where the functions of broad-band and visible-blinded modes are switched facile by a bias polarity. The unprecedented device paves the way for extending the applications of Si detectors toward novel sensory platforms such as night-vision, motion tracking, and bio-sensing.
KW - black silicon
KW - multimodal detection
KW - oxidative chemical vapor deposition
KW - photodetector
KW - poly(3,4-ethylene dioxythiophene)
UR - http://www.scopus.com/inward/record.url?scp=85128767116&partnerID=8YFLogxK
U2 - 10.1002/adfm.202201641
DO - 10.1002/adfm.202201641
M3 - Article
AN - SCOPUS:85128767116
SN - 1616-301X
VL - 32
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 29
M1 - 2201641
ER -