Human dopamine receptor nanovesicles for gate-potential modulators in high-performance field-effect transistor biosensors

Seon Joo Park, Hyun Seok Song, Oh Seok Kwon, Ji Hyun Chung, Seung Hwan Lee, Ji Hyun An, Sae Ryun Ahn, Ji Eun Lee, Hyeonseok Yoon, Tai Hyun Park, Jyongsik Jang

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

The development of molecular detection that allows rapid responses with high sensitivity and selectivity remains challenging. Herein, we demonstrate the strategy of novel bio-nanotechnology to successfully fabricate high-performance dopamine (DA) biosensor using DA Receptor-containing uniform-particle-shaped Nanovesicles-immobilized Carboxylated poly(3,4-ethylenedioxythiophene) (CPEDOT) NTs (DRNCNs). DA molecules are commonly associated with serious diseases, such as Parkinson's and Alzheimer's diseases. For the first time, nanovesicles containing a human DA receptor D1 (hDRD1) were successfully constructed from HEK-293 cells, stably expressing hDRD1. The nanovesicles containing hDRD1 as gate-potential modulator on the conducting polymer (CP) nanomaterial transistors provided high-performance responses to DA molecule owing to their uniform, monodispersive morphologies and outstanding discrimination ability. Specifically, the DRNCNs were integrated into a liquid-ion gated field-effect transistor (FET) system via immobilization and attachment processes, leading to high sensitivity and excellent selectivity toward DA in liquid state. Unprecedentedly, the minimum detectable level (MDL) from the field-induced DA responses was as low as 10â€...pM in real- time, which is 10 times more sensitive than that of previously reported CP based-DA biosensors. Moreover, the FET-type DRNCN biosensor had a rapid response time (<1â€...s) and showed excellent selectivity in human serum.

Original languageEnglish
Article number4342
JournalScientific Reports
Volume4
DOIs
StatePublished - 11 Mar 2014

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant (No. 2011-0017125, 2013-003890, 2013K000368), funded by the Ministry of Education, Science and Technology (MEST). We thank Sun Young Jang (Phillips Exeter Academy) for assistance of transducer of FET sensor.

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