Hopping conduction in polydiacetylene single crystals

A. N. Aleshin, J. Y. Lee, S. W. Chu, S. W. Lee, B. Kim, S. J. Ahn, Y. W. Park

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The charge transport in polydiacetylene quasi-1D single crystals (PDA-PTS) has been studied as a function of temperature, electric and magnetic fields. In the Ohmic regime the temperature dependence of the resistivity, ρ(T), is characteristic of hopping conduction with a crossover at T<50 K from activated ρ(T) =ρ0 exp [(EA/kBT)], with EA∼13-19 meV to variable-range hopping transport ρ(T)=ρ0 exp [(T0/T)p], with p∼0.65-0.70. At modest electric fields the resistivity depends as ρ(E,T)=ρ(0,T)exp (-eEL/kBT), where the characteristic hopping length changes as L∼T-m with m∼0.5 at T>50 K and m∼0.75 at T<50 K. At high electric fields the low temperature current becomes temperature independent and follows: I(E) =I0 exp [-(E /0E)0.5], which corresponds to the regime of activation-free phonon-emission-assisted hopping conduction. Magnetoresistance at T<4.2 K is negative and depends on magnetic fields H as In[ρ(H,T)/ρ(0,T)]∼H0.5. The results demonstrate that at low temperature the charge transport is mainly supported due to quasi-1D variable-range hopping with the influence of Coulomb interactions. At higher temperatures the thermally activated nearest-neighbor transport by small polarons is dominant.

Original languageEnglish
Article number214203
Pages (from-to)214203-1-214203-6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number21
StatePublished - Jun 2004

Bibliographical note

Funding Information:
The authors are grateful to G. Wegner and V. Enkelmann for providing PDA-PTS single crystals and valuable discussions. This work was supported by KISTEP, under Contract No. M6-0301-00-0005, Korea. Partial support for A.N.A. is from the Brain Pool Program of the Korean Federation of Science and Technology Societies, Korea. A portion of this work was performed at the National High Magnetic Field Laboratory in Tallahassee, Florida, which is supported by the NSF Cooperative Agreement No. DMR-95-27035 and by the State of Florida, USA.


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