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Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

  • Tae Hyeon Kim
  • , Sungjun Kim
  • , Hyungjin Kim
  • , Min Hwi Kim
  • , Suhyun Bang
  • , Seongjae Cho
  • , Byung Gook Park

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

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