Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
- Tae Hyeon Kim
- , Sungjun Kim
- , Hyungjin Kim
- , Min Hwi Kim
- , Suhyun Bang
- , Seongjae Cho
- , Byung Gook Park
Research output: Contribution to journal › Article › peer-review
3
Scopus
citations