Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

Tae Hyeon Kim; Sungjun Kim; Hyungjin Kim; Min Hwi Kim; Suhyun Bang; Seongjae Cho; Byung Gook Park

doi:10.1016/j.sse.2017.10.015

Highly uniform and reliable resistive switching characteristics of a Ni/WO_x/p⁺-Si memory device

Tae Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min Hwi Kim, Suhyun Bang, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WO_x/p⁺-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WO_x-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Solid-State Electronics
Volume	140
DOIs	https://doi.org/10.1016/j.sse.2017.10.015
State	Published - Feb 2018

Bibliographical note

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

Bipolar resistive switching
MIS structure
Rapid thermal oxidation (RTO)
Space-charge-limited current (SCLC)
WO RRAM

Access to Document

10.1016/j.sse.2017.10.015

Cite this

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title = "Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device",

abstract = "In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.",

keywords = "Bipolar resistive switching, MIS structure, Rapid thermal oxidation (RTO), Space-charge-limited current (SCLC), WO RRAM",

author = "Kim, {Tae Hyeon} and Sungjun Kim and Hyungjin Kim and Kim, {Min Hwi} and Suhyun Bang and Seongjae Cho and Park, {Byung Gook}",

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T1 - Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

AU - Kim, Tae Hyeon

AU - Kim, Sungjun

AU - Kim, Hyungjin

AU - Kim, Min Hwi

AU - Bang, Suhyun

AU - Cho, Seongjae

AU - Park, Byung Gook

PY - 2018/2

Y1 - 2018/2

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AB - In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.

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KW - MIS structure

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