Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

Han Don Um; Syed Abdul Moiz; Kwang Tae Park; Jin Young Jung; Sang Won Jee; Cheol Hyoun Ahn; Dong Chan Kim; Hyung Koun Cho; Dong Wook Kim; Jung Ho Lee

doi:10.1063/1.3543845

Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

Han Don Um, Syed Abdul Moiz, Kwang Tae Park, Jin Young Jung, Sang Won Jee, Cheol Hyoun Ahn, Dong Chan Kim, Hyung Koun Cho, Dong Wook Kim, Jung Ho Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n -type ZnO layer that surrounded a p -type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.

Original language	English
Article number	033102
Journal	Applied Physics Letters
Volume	98
Issue number	3
DOIs	https://doi.org/10.1063/1.3543845
State	Published - 17 Jan 2011

Bibliographical note

Funding Information:
This work was supported by the Pioneer Research Center Program (Grant No. 2010-0002231) and Nano R&D Program (Grant No. 20090083229) through the National Research Foundation grant funded by the Ministry of Education, Science and Technology. This work was supported by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning grant funded by the Ministry of Knowledge Economy (Grant No. 2009T100100614). H.-D.U., K.-T.P., and S.-W.J. acknowledge financial support of the fifth-stage Brain Korea 21 Project in 2010.

Access to Document

10.1063/1.3543845

Cite this

@article{c977d7471f2c4226bc39012987b1b238,

title = "Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes",

abstract = "A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n -type ZnO layer that surrounded a p -type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.",

author = "Um, {Han Don} and Moiz, {Syed Abdul} and Park, {Kwang Tae} and Jung, {Jin Young} and Jee, {Sang Won} and Ahn, {Cheol Hyoun} and Kim, {Dong Chan} and Cho, {Hyung Koun} and Kim, {Dong Wook} and Lee, {Jung Ho}",

note = "Funding Information: This work was supported by the Pioneer Research Center Program (Grant No. 2010-0002231) and Nano R&D Program (Grant No. 20090083229) through the National Research Foundation grant funded by the Ministry of Education, Science and Technology. This work was supported by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning grant funded by the Ministry of Knowledge Economy (Grant No. 2009T100100614). H.-D.U., K.-T.P., and S.-W.J. acknowledge financial support of the fifth-stage Brain Korea 21 Project in 2010.",

year = "2011",

month = jan,

day = "17",

doi = "10.1063/1.3543845",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

AU - Um, Han Don

AU - Moiz, Syed Abdul

AU - Park, Kwang Tae

AU - Jung, Jin Young

AU - Jee, Sang Won

AU - Ahn, Cheol Hyoun

AU - Kim, Dong Chan

AU - Cho, Hyung Koun

AU - Kim, Dong Wook

AU - Lee, Jung Ho

N1 - Funding Information: This work was supported by the Pioneer Research Center Program (Grant No. 2010-0002231) and Nano R&D Program (Grant No. 20090083229) through the National Research Foundation grant funded by the Ministry of Education, Science and Technology. This work was supported by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning grant funded by the Ministry of Knowledge Economy (Grant No. 2009T100100614). H.-D.U., K.-T.P., and S.-W.J. acknowledge financial support of the fifth-stage Brain Korea 21 Project in 2010.

PY - 2011/1/17

Y1 - 2011/1/17

N2 - A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n -type ZnO layer that surrounded a p -type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.

AB - A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n -type ZnO layer that surrounded a p -type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.

UR - http://www.scopus.com/inward/record.url?scp=79251558815&partnerID=8YFLogxK

U2 - 10.1063/1.3543845

DO - 10.1063/1.3543845

M3 - Article

AN - SCOPUS:79251558815

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033102

ER -

Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

Abstract

Bibliographical note

Access to Document

Fingerprint

Cite this