Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

Han Don Um, Syed Abdul Moiz, Kwang Tae Park, Jin Young Jung, Sang Won Jee, Cheol Hyoun Ahn, Dong Chan Kim, Hyung Koun Cho, Dong Wook Kim, Jung Ho Lee

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Abstract

A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n -type ZnO layer that surrounded a p -type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.

Original languageEnglish
Article number033102
JournalApplied Physics Letters
Volume98
Issue number3
DOIs
StatePublished - 17 Jan 2011

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