Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

I. G. Baek; M. S. Lee; S. Seo; M. J. Lee; D. H. Seo; D. S. Suh; J. C. Park; S. O. Park; H. S. Kim; I. K. Yoo; U. In Chung; J. T. Moon

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. In Chung, J. T. Moon

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

687 Scopus citations

Abstract

Simple binary-TMO (Transition Metal Oxide) Resistive Random Access Memory named as OxRRAM has been fully integrated with 0.18μm CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300°C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2μm².

Original language	English
Pages (from-to)	587-590
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 Dec 2004 → 15 Dec 2004

Cite this

@article{c18f234ae5b84beeba18421857d89665,

title = "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses",

abstract = "Simple binary-TMO (Transition Metal Oxide) Resistive Random Access Memory named as OxRRAM has been fully integrated with 0.18μm CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300°C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2μm2.",

author = "Baek, {I. G.} and Lee, {M. S.} and S. Seo and Lee, {M. J.} and Seo, {D. H.} and Suh, {D. S.} and Park, {J. C.} and Park, {S. O.} and Kim, {H. S.} and Yoo, {I. K.} and Chung, {U. In} and Moon, {J. T.}",

year = "2004",

language = "English",

pages = "587--590",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

TY - JOUR

T1 - Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

AU - Baek, I. G.

AU - Lee, M. S.

AU - Seo, S.

AU - Lee, M. J.

AU - Seo, D. H.

AU - Suh, D. S.

AU - Park, J. C.

AU - Park, S. O.

AU - Kim, H. S.

AU - Yoo, I. K.

AU - Chung, U. In

AU - Moon, J. T.

PY - 2004

Y1 - 2004

N2 - Simple binary-TMO (Transition Metal Oxide) Resistive Random Access Memory named as OxRRAM has been fully integrated with 0.18μm CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300°C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2μm2.

AB - Simple binary-TMO (Transition Metal Oxide) Resistive Random Access Memory named as OxRRAM has been fully integrated with 0.18μm CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300°C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2μm2.

UR - http://www.scopus.com/inward/record.url?scp=21644443347&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644443347

SN - 0163-1918

SP - 587

EP - 590

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Abstract

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