Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. In Chung, J. T. Moon

Research output: Contribution to journalConference articlepeer-review

670 Scopus citations

Abstract

Simple binary-TMO (Transition Metal Oxide) Resistive Random Access Memory named as OxRRAM has been fully integrated with 0.18μm CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300°C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2μm2.

Original languageEnglish
Pages (from-to)587-590
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

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