Highly durable and flexible memory based on resistance switching

Sungho Kim; Oktay Yarimaga; Sung Jin Choi; Yang Kyu Choi

doi:10.1016/j.sse.2009.10.021

Highly durable and flexible memory based on resistance switching

Sungho Kim, Oktay Yarimaga, Sung Jin Choi, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Resistance random access memory (RRAM) consisting of stacked Al/TiO_x/Al structure is demonstrated on a flexible and transparent substrate. To improve cell to cell uniformity, TiO_x formed by atomic layer deposition is used for resistive switching material. The simple cross-bar structure of the RRAM and good ductility of aluminum electrode results in excellent flexibility and mechanical endurance. Particularly, bipolar and unipolar resistive switching (BRS, URS) behavior appeared simultaneously were investigated. Depending on the current compliance, BRS or URS could be selectively observed. Furthermore, the permanent transition from BRS to URS was observed with a specific current compliance. To understand this transition behavior, the γ-ray irradiation effect into resistive switching is primarily investigated.

Original language	English
Pages (from-to)	392-396
Number of pages	5
Journal	Solid-State Electronics
Volume	54
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2009.10.021
State	Published - Apr 2010

Keywords

γ-Irradiation
Flexible
Resistance random access memory

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10.1016/j.sse.2009.10.021

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title = "Highly durable and flexible memory based on resistance switching",

abstract = "Resistance random access memory (RRAM) consisting of stacked Al/TiOx/Al structure is demonstrated on a flexible and transparent substrate. To improve cell to cell uniformity, TiOx formed by atomic layer deposition is used for resistive switching material. The simple cross-bar structure of the RRAM and good ductility of aluminum electrode results in excellent flexibility and mechanical endurance. Particularly, bipolar and unipolar resistive switching (BRS, URS) behavior appeared simultaneously were investigated. Depending on the current compliance, BRS or URS could be selectively observed. Furthermore, the permanent transition from BRS to URS was observed with a specific current compliance. To understand this transition behavior, the γ-ray irradiation effect into resistive switching is primarily investigated.",

keywords = "γ-Irradiation, Flexible, Resistance random access memory",

author = "Sungho Kim and Oktay Yarimaga and Choi, {Sung Jin} and Choi, {Yang Kyu}",

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AU - Kim, Sungho

AU - Yarimaga, Oktay

AU - Choi, Sung Jin

AU - Choi, Yang Kyu

PY - 2010/4

Y1 - 2010/4

N2 - Resistance random access memory (RRAM) consisting of stacked Al/TiOx/Al structure is demonstrated on a flexible and transparent substrate. To improve cell to cell uniformity, TiOx formed by atomic layer deposition is used for resistive switching material. The simple cross-bar structure of the RRAM and good ductility of aluminum electrode results in excellent flexibility and mechanical endurance. Particularly, bipolar and unipolar resistive switching (BRS, URS) behavior appeared simultaneously were investigated. Depending on the current compliance, BRS or URS could be selectively observed. Furthermore, the permanent transition from BRS to URS was observed with a specific current compliance. To understand this transition behavior, the γ-ray irradiation effect into resistive switching is primarily investigated.

AB - Resistance random access memory (RRAM) consisting of stacked Al/TiOx/Al structure is demonstrated on a flexible and transparent substrate. To improve cell to cell uniformity, TiOx formed by atomic layer deposition is used for resistive switching material. The simple cross-bar structure of the RRAM and good ductility of aluminum electrode results in excellent flexibility and mechanical endurance. Particularly, bipolar and unipolar resistive switching (BRS, URS) behavior appeared simultaneously were investigated. Depending on the current compliance, BRS or URS could be selectively observed. Furthermore, the permanent transition from BRS to URS was observed with a specific current compliance. To understand this transition behavior, the γ-ray irradiation effect into resistive switching is primarily investigated.

KW - γ-Irradiation

KW - Flexible

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JO - Solid-State Electronics

JF - Solid-State Electronics

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Highly durable and flexible memory based on resistance switching

Abstract

Keywords

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