High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

Jeong Min Baik; Myung Hwa Kim; Christopher Larson; Xihong Chen; Shujing Guo; Alec M. Wodtke; Martin Moskovits

doi:10.1063/1.2949086

High-yield TiO₂ nanowire synthesis and single nanowire field-effect transistor fabrication

Jeong Min Baik, Myung Hwa Kim, Christopher Larson, Xihong Chen, Shujing Guo, Alec M. Wodtke, Martin Moskovits

Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report a facile method for synthesizing single-crystal rutile TiO ₂ nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO₂ nanowires to be n -type semiconductors with conductance activation energy of ∼58 meV.

Original language	English
Article number	242111
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2949086
State	Published - 2008

Bibliographical note

Funding Information:
J.M.B. and M.H.K. contributed equally to this study. This work was supported by the Institute for Collaborative Biotechnologies through Grant No. DAAD19-03-D-0004 from the U.S. Army Research Office and made extensive use of the MRL Central Facilities at UCSB supported by the National Science Foundation under Award Nos. DMR-0080034 and DMR-0216466 for the HRTEM/STEM microscopy. We gratefully acknowledge the financial support from the Partnership for International Research and Education—for Electronic Chemistry and Catalysis at Interfaces—NSF Grant No. OISE-0530268.

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10.1063/1.2949086

Cite this

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abstract = "We report a facile method for synthesizing single-crystal rutile TiO 2 nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO2 nanowires to be n -type semiconductors with conductance activation energy of ∼58 meV.",

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AU - Kim, Myung Hwa

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AU - Chen, Xihong

AU - Guo, Shujing

AU - Wodtke, Alec M.

AU - Moskovits, Martin

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AB - We report a facile method for synthesizing single-crystal rutile TiO 2 nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO2 nanowires to be n -type semiconductors with conductance activation energy of ∼58 meV.

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