@inproceedings{48d17cb75f1e41f292cdc47da90990b9,
title = "High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications",
abstract = "A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a Vth shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.",
author = "Choi, \{Sung Jin\} and Han, \{Jin Woo\} and Sungho Kim and Kim, \{Dong Hyun\} and Jang, \{Moon Gyu\} and Yang, \{Jong Heon\} and Kim, \{Jin Soo\} and Kim, \{Kwang Hee\} and Lee, \{Gi Sung\} and Oh, \{Jae Sub\} and Song, \{Myeong Ho\} and Park, \{Yun Chang\} and Kim, \{Jeoung Woo\} and Choi, \{Yang Kyu\}",
year = "2008",
doi = "10.1109/IEDM.2008.4796657",
language = "English",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}