High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications

Sung Jin Choi; Jin Woo Han; Sungho Kim; Dong Hyun Kim; Moon Gyu Jang; Jong Heon Yang; Jin Soo Kim; Kwang Hee Kim; Gi Sung Lee; Jae Sub Oh; Myeong Ho Song; Yun Chang Park; Jeoung Woo Kim; Yang Kyu Choi

doi:10.1109/IEDM.2008.4796657

High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications

Sung Jin Choi, Jin Woo Han, Sungho Kim, Dong Hyun Kim, Moon Gyu Jang, Jong Heon Yang, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myeong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang Kyu Choi

Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a V_th shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796657
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	15/12/08 → 17/12/08

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10.1109/IEDM.2008.4796657

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Choi, S. J., Han, J. W., Kim, S., Kim, D. H., Jang, M. G., Yang, J. H., Kim, J. S., Kim, K. H., Lee, G. S., Oh, J. S., Song, M. H., Park, Y. C., Kim, J. W., & Choi, Y. K. (2008). High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796657 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796657

@inproceedings{48d17cb75f1e41f292cdc47da90990b9,

title = "High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications",

abstract = "A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a Vth shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.",

author = "Choi, \{Sung Jin\} and Han, \{Jin Woo\} and Sungho Kim and Kim, \{Dong Hyun\} and Jang, \{Moon Gyu\} and Yang, \{Jong Heon\} and Kim, \{Jin Soo\} and Kim, \{Kwang Hee\} and Lee, \{Gi Sung\} and Oh, \{Jae Sub\} and Song, \{Myeong Ho\} and Park, \{Yun Chang\} and Kim, \{Jeoung Woo\} and Choi, \{Yang Kyu\}",

year = "2008",

doi = "10.1109/IEDM.2008.4796657",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Choi, SJ, Han, JW, Kim, S, Kim, DH, Jang, MG, Yang, JH, Kim, JS, Kim, KH, Lee, GS, Oh, JS, Song, MH, Park, YC, Kim, JW & Choi, YK 2008, High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796657, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796657

High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications. / Choi, Sung Jin; Han, Jin Woo; Kim, Sungho et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796657 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Choi, Sung Jin

AU - Han, Jin Woo

AU - Kim, Sungho

AU - Kim, Dong Hyun

AU - Jang, Moon Gyu

AU - Yang, Jong Heon

AU - Kim, Jin Soo

AU - Kim, Kwang Hee

AU - Lee, Gi Sung

AU - Oh, Jae Sub

AU - Song, Myeong Ho

AU - Park, Yun Chang

AU - Kim, Jeoung Woo

AU - Choi, Yang Kyu

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N2 - A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a Vth shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.

AB - A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a Vth shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.

UR - https://www.scopus.com/pages/publications/64549090987

U2 - 10.1109/IEDM.2008.4796657

DO - 10.1109/IEDM.2008.4796657

M3 - Conference contribution

AN - SCOPUS:64549090987

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Choi SJ, Han JW, Kim S, Kim DH, Jang MG, Yang JH et al. High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications. In 2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796657. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2008.4796657

High speed flash memory and 1T-DRAM on dopant segregated schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications

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