High-performance polycrystalline silicon tft on the structure of a dopant-segregated schottky-barrier source/drain

Sung Jin Choi; Jin Woo Han; Sungho Kim; Dong Il Moon; Moongyu Jang; Yang Kyu Choi

doi:10.1109/LED.2009.2038348

High-performance polycrystalline silicon tft on the structure of a dopant-segregated schottky-barrier source/drain

Sung Jin Choi
, Jin Woo Han
, Sungho Kim
, Dong Il Moon
, Moongyu Jang
, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.

Original language	English
Article number	5398906
Pages (from-to)	228-230
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2038348
State	Published - Mar 2010

Keywords

Dopant segregation (DS)
Dopant-segregated Schottky barrier (DSSB)
High performance
MOSFET
Ni silicide
Schottky barrier (SB)
Thin body
Thin-film transistors (TFTs)

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10.1109/LED.2009.2038348

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title = "High-performance polycrystalline silicon tft on the structure of a dopant-segregated schottky-barrier source/drain",

abstract = "A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.",

keywords = "Dopant segregation (DS), Dopant-segregated Schottky barrier (DSSB), High performance, MOSFET, Ni silicide, Schottky barrier (SB), Thin body, Thin-film transistors (TFTs)",

author = "Choi, \{Sung Jin\} and Han, \{Jin Woo\} and Sungho Kim and Moon, \{Dong Il\} and Moongyu Jang and Choi, \{Yang Kyu\}",

year = "2010",

month = mar,

doi = "10.1109/LED.2009.2038348",

language = "English",

volume = "31",

pages = "228--230",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High-performance polycrystalline silicon tft on the structure of a dopant-segregated schottky-barrier source/drain

AU - Choi, Sung Jin

AU - Han, Jin Woo

AU - Kim, Sungho

AU - Moon, Dong Il

AU - Jang, Moongyu

AU - Choi, Yang Kyu

PY - 2010/3

Y1 - 2010/3

N2 - A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.

AB - A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.

KW - Dopant segregation (DS)

KW - Dopant-segregated Schottky barrier (DSSB)

KW - High performance

KW - MOSFET

KW - Ni silicide

KW - Schottky barrier (SB)

KW - Thin body

KW - Thin-film transistors (TFTs)

UR - https://www.scopus.com/pages/publications/77649187284

U2 - 10.1109/LED.2009.2038348

DO - 10.1109/LED.2009.2038348

M3 - Article

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SN - 0741-3106

VL - 31

SP - 228

EP - 230

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5398906

ER -

High-performance polycrystalline silicon tft on the structure of a dopant-segregated schottky-barrier source/drain

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Keywords

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