High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 °C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm²/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.