High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 v operation

Jin Su Kim, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Jung Hee Lee, Seongjae Cho, Gwan Min Yoo, In Man Kang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A Ge/GaAs heterojunction provides momentous improvements in current characteristics due to its band arrangement and enhanced band-to-band tunneling. Ge has a narrow bandgap (0.67 eV) and a smaller electron affinity (4.0 eV) and GaAs has a relatively larger energy bandgap (1.42 eV) and electron affinity (4.07 eV) at room temperature. For the heterojunction of GaAs and Ge, by grafting p+ Ge source and n+ GaAs well in forming a GaAs-on-Ge structure, prominently high performances including current drivability of Ion=482.6 μA μm-1, current ratio (Ion/Ioff)=1.76×109, and S=8.02 mV dec-1 have been achieved by design optimization of doping profile aiming at extremely low drain voltage (VDS) of 0.3 V. The design variables were VDS, the length of n+ doped well in the GaAs layer (Lwell) and n-type doping concentration in the drain junction (Ndrain). They are confirmed by the results that Ge/GaAs heterojunction TFET is very suitable for low-power and high-speed applications.

Original languageEnglish
Article number035020
JournalSemiconductor Science and Technology
Issue number3
StatePublished - 1 Mar 2015

Bibliographical note

Publisher Copyright:
© 2015 IOP Publishing Ltd.


  • DC characteristics
  • Ge/GaAs
  • RF performances
  • TFET
  • band-to-band tunneling
  • heterojunction
  • low power


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