High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition

R. E. Morjan; V. Maltsev; O. Nerushev; Y. Yao; L. K.L. Falk; E. E.B. Campbell

doi:10.1016/j.cplett.2003.11.063

High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition

R. E. Morjan, V. Maltsev, O. Nerushev, Y. Yao, L. K.L. Falk, E. E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

DC plasma-enhanced chemical vapour deposition (PECVD) was used to grow films of aligned carbon nanotubes on a silicon wafer using Fe as catalyst and a C₂H₂/H₂ gas mixture. The films were of high quality and showed an exceptionally high growth rate compared with other plasma growth techniques. For long growth times, the upper parts of the nanotubes developed additional outer graphite flakes. The onset of the 'tube decoration' correlates with a decrease in linear growth rate and can be related to the gradient of plasma parameters in the cathode sheath.

Original language	English
Pages (from-to)	385-390
Number of pages	6
Journal	Chemical Physics Letters
Volume	383
Issue number	3-4
DOIs	https://doi.org/10.1016/j.cplett.2003.11.063
State	Published - 8 Jan 2004

Bibliographical note

Funding Information:
Financial support by the Swedish Strategic Research Foundation within the CARAMEL Materials Consortium is gratefully acknowledged. V.M. acknowledges the NIS Young Scientists Programme for Financial Support.

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10.1016/j.cplett.2003.11.063

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abstract = "DC plasma-enhanced chemical vapour deposition (PECVD) was used to grow films of aligned carbon nanotubes on a silicon wafer using Fe as catalyst and a C2H2/H2 gas mixture. The films were of high quality and showed an exceptionally high growth rate compared with other plasma growth techniques. For long growth times, the upper parts of the nanotubes developed additional outer graphite flakes. The onset of the 'tube decoration' correlates with a decrease in linear growth rate and can be related to the gradient of plasma parameters in the cathode sheath.",

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AU - Morjan, R. E.

AU - Maltsev, V.

AU - Nerushev, O.

AU - Yao, Y.

AU - Falk, L. K.L.

AU - Campbell, E. E.B.

N1 - Funding Information: Financial support by the Swedish Strategic Research Foundation within the CARAMEL Materials Consortium is gratefully acknowledged. V.M. acknowledges the NIS Young Scientists Programme for Financial Support.

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AB - DC plasma-enhanced chemical vapour deposition (PECVD) was used to grow films of aligned carbon nanotubes on a silicon wafer using Fe as catalyst and a C2H2/H2 gas mixture. The films were of high quality and showed an exceptionally high growth rate compared with other plasma growth techniques. For long growth times, the upper parts of the nanotubes developed additional outer graphite flakes. The onset of the 'tube decoration' correlates with a decrease in linear growth rate and can be related to the gradient of plasma parameters in the cathode sheath.

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High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition

Abstract

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