High frequency noise of epitaxial graphene grown on sapphire

L. Ardaravičius; J. Liberis; E. Šermukšnis; A. Matulionis; J. Hwang; J. Y. Kwak; D. Campbell; H. A. Alsalman; L. F. Eastman; M. G. Spencer

doi:10.1002/pssr.201307074

High frequency noise of epitaxial graphene grown on sapphire

L. Ardaravičius, J. Liberis, E. Šermukšnis, A. Matulionis, J. Hwang, J. Y. Kwak, D. Campbell, H. A. Alsalman, L. F. Eastman, M. G. Spencer

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Microwave noise technique is applied to study in-plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/f^1.25-type dependence is observed in the 200 MHz-2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer.

Original language	English
Pages (from-to)	348-351
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201307074
State	Published - May 2013

Keywords

Contact resistance
Epitaxial graphene
Holes
Microwave frequencies
MOCVD
Sapphire
Shot noise

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@article{fe3e5fb6ced24d6e93a1eb8c426cda7a,

title = "High frequency noise of epitaxial graphene grown on sapphire",

abstract = "Microwave noise technique is applied to study in-plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/f1.25-type dependence is observed in the 200 MHz-2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer.",

keywords = "Contact resistance, Epitaxial graphene, Holes, Microwave frequencies, MOCVD, Sapphire, Shot noise",

author = "L. Ardaravi{\v c}ius and J. Liberis and E. {\v S}ermuk{\v s}nis and A. Matulionis and J. Hwang and Kwak, {J. Y.} and D. Campbell and Alsalman, {H. A.} and Eastman, {L. F.} and Spencer, {M. G.}",

year = "2013",

month = may,

doi = "10.1002/pssr.201307074",

language = "English",

volume = "7",

pages = "348--351",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - High frequency noise of epitaxial graphene grown on sapphire

AU - Ardaravičius, L.

AU - Liberis, J.

AU - Šermukšnis, E.

AU - Matulionis, A.

AU - Hwang, J.

AU - Kwak, J. Y.

AU - Campbell, D.

AU - Alsalman, H. A.

AU - Eastman, L. F.

AU - Spencer, M. G.

PY - 2013/5

Y1 - 2013/5

N2 - Microwave noise technique is applied to study in-plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/f1.25-type dependence is observed in the 200 MHz-2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer.

AB - Microwave noise technique is applied to study in-plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/f1.25-type dependence is observed in the 200 MHz-2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer.

KW - Contact resistance

KW - Epitaxial graphene

KW - Holes

KW - Microwave frequencies

KW - MOCVD

KW - Sapphire

KW - Shot noise

UR - http://www.scopus.com/inward/record.url?scp=84877908510&partnerID=8YFLogxK

U2 - 10.1002/pssr.201307074

DO - 10.1002/pssr.201307074

M3 - Article

AN - SCOPUS:84877908510

SN - 1862-6254

VL - 7

SP - 348

EP - 351

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 5

ER -

High frequency noise of epitaxial graphene grown on sapphire

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Keywords

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