Abstract
We propose a tunneling field-effect transistor (TFET) with a heteromaterial (HM)-gate not only for low standby power (LSTP) applications, which TFETs are genuinely suitable for, but also for highspeed performance by properly adjusting intrinsic gate capacitance (Cgg -. As a result of simulations in this work, the HM-gate TFET showed better subthreshold characteristics (smaller S ) at an appropriate threshold voltage (Vth - for LSTP applications, enhancing tunneling probability by modulating the difference in the metal workfunction (-m - between the source-side gate (S-gate) and the drainside gate (D-gate). Further, the Cgg of HM-gate TFET were extracted and compared against that of conventional TFETs having gates with various -m 's. Since lower Cgg can be formed by high -m in the D-gate, the HM-gate TFET has an excellent cut-off frequency (fT - and intrinsic delay time (- ) associated with the Cgg . We confirmed that the HM-gate TFET proposed in this work achieves superb performance for LSTP applications as well as high-frequency operations.
Original language | English |
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Pages (from-to) | 8136-8140 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 14 |
Issue number | 11 |
DOIs | |
State | Published - 1 Nov 2014 |
Bibliographical note
Publisher Copyright:Copyright © 2014 American Scientific Publishers All rights reserved.
Keywords
- Heteromaterial gate
- High-Speed.
- Low standby power
- Radio-Frequency
- Tunneling field-effect transistor