Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applications

Young Jun Yoon, Jae Hwa Seo, Eou Sik Cho, Jung Hee Lee, Jin Hyuk Bae, Seongjae Cho, In Man Kang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We propose a tunneling field-effect transistor (TFET) with a heteromaterial (HM)-gate not only for low standby power (LSTP) applications, which TFETs are genuinely suitable for, but also for highspeed performance by properly adjusting intrinsic gate capacitance (Cgg -. As a result of simulations in this work, the HM-gate TFET showed better subthreshold characteristics (smaller S ) at an appropriate threshold voltage (Vth - for LSTP applications, enhancing tunneling probability by modulating the difference in the metal workfunction (-m - between the source-side gate (S-gate) and the drainside gate (D-gate). Further, the Cgg of HM-gate TFET were extracted and compared against that of conventional TFETs having gates with various -m 's. Since lower Cgg can be formed by high -m in the D-gate, the HM-gate TFET has an excellent cut-off frequency (fT - and intrinsic delay time (- ) associated with the Cgg . We confirmed that the HM-gate TFET proposed in this work achieves superb performance for LSTP applications as well as high-frequency operations.

Original languageEnglish
Pages (from-to)8136-8140
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number11
StatePublished - 1 Nov 2014

Bibliographical note

Publisher Copyright:
Copyright © 2014 American Scientific Publishers All rights reserved.


  • Heteromaterial gate
  • High-Speed.
  • Low standby power
  • Radio-Frequency
  • Tunneling field-effect transistor


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