Abstract
The self-trapping of holes with the formation of a molecular X2 - anion is a well-established process in metal halide (MX) crystals, but V-center (2X- + h+ X2-) and H-center (X- + Xi- + h+ X2-) defects have not yet been confirmed in halide perovskite semiconductors. The I2 - split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.
| Original language | English |
|---|---|
| Pages (from-to) | 2713-2714 |
| Number of pages | 2 |
| Journal | ACS Energy Letters |
| Volume | 2 |
| Issue number | 12 |
| DOIs | |
| State | Published - 8 Dec 2017 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
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SDG 7 Affordable and Clean Energy
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