H-Center and V-Center Defects in Hybrid Halide Perovskites

Lucy D. Whalley, Rachel Crespo-Otero, Aron Walsh

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


The self-trapping of holes with the formation of a molecular X2 - anion is a well-established process in metal halide (MX) crystals, but V-center (2X- + h+ X2-) and H-center (X- + Xi- + h+ X2-) defects have not yet been confirmed in halide perovskite semiconductors. The I2 - split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.

Original languageEnglish
Pages (from-to)2713-2714
Number of pages2
JournalACS Energy Letters
Issue number12
StatePublished - 8 Dec 2017

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.


Dive into the research topics of 'H-Center and V-Center Defects in Hybrid Halide Perovskites'. Together they form a unique fingerprint.

Cite this