Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array

Wookyung Sun, Sujin Choi, Hyein Lim, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

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Abstract

The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation.

Original languageEnglish
Article number04EE10
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
StatePublished - Apr 2016

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT and Future Planning (No. 2014R1A2A2A01002219).

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

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