Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor

Jinhong Shin; Abdul Waheed; Kyriacos Agapiou; Wyatt A. Winkenwerder; Hyun Wu Kim; Richard A. Jones; Gyeong S. Hwang; John G. Ekerdt

doi:10.1021/ja0673938

Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor

Jinhong Shin
, Abdul Waheed
, Kyriacos Agapiou
, Wyatt A. Winkenwerder
, Hyun Wu Kim
, Richard A. Jones
, Gyeong S. Hwang
, John G. Ekerdt

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Thin films (∼30 nm) of amorphous RuP alloys (P ∼ 15-20%) can be grown by CVD from the single source precursor cis-H₂Ru(PMe₃)₄ at 250-300 °C and 200 mTorr pressure on native SiO2.

Original language	English
Pages (from-to)	16510-16511
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	51
DOIs	https://doi.org/10.1021/ja0673938
State	Published - 27 Dec 2006

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@article{c0a2c80a554b4bbeb30323862dc3b5ec,

title = "Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor",

abstract = "Thin films (∼30 nm) of amorphous RuP alloys (P ∼ 15-20\%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 °C and 200 mTorr pressure on native SiO2.",

author = "Jinhong Shin and Abdul Waheed and Kyriacos Agapiou and Winkenwerder, \{Wyatt A.\} and Kim, \{Hyun Wu\} and Jones, \{Richard A.\} and Hwang, \{Gyeong S.\} and Ekerdt, \{John G.\}",

year = "2006",

month = dec,

day = "27",

doi = "10.1021/ja0673938",

language = "English",

volume = "128",

pages = "16510--16511",

journal = "Journal of the American Chemical Society",

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TY - JOUR

T1 - Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor

AU - Shin, Jinhong

AU - Waheed, Abdul

AU - Agapiou, Kyriacos

AU - Winkenwerder, Wyatt A.

AU - Kim, Hyun Wu

AU - Jones, Richard A.

AU - Hwang, Gyeong S.

AU - Ekerdt, John G.

PY - 2006/12/27

Y1 - 2006/12/27

N2 - Thin films (∼30 nm) of amorphous RuP alloys (P ∼ 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 °C and 200 mTorr pressure on native SiO2.

AB - Thin films (∼30 nm) of amorphous RuP alloys (P ∼ 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 °C and 200 mTorr pressure on native SiO2.

UR - https://www.scopus.com/pages/publications/33845937091

U2 - 10.1021/ja0673938

DO - 10.1021/ja0673938

M3 - Article

C2 - 17177394

AN - SCOPUS:33845937091

SN - 0002-7863

VL - 128

SP - 16510

EP - 16511

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 51

ER -

Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor

Abstract

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