Growth of highly oriented Bi4Ti3O12(104) thin films on Al2O3(0001) substrates using pulsed laser deposition

W. Jo; T. W. Noh

doi:10.1063/1.112561

Growth of highly oriented Bi₄Ti₃O₁₂(104) thin films on Al₂O₃(0001) substrates using pulsed laser deposition

W. Jo, T. W. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Using pulsed laser deposition, Bi₄Ti₃O₁₂ thin films were grown on Al₂O₃(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi₄Ti₃O ₁₂ growth behaviors were investigated. It is possible to grow a Bi₄Ti₃O₁₂ film whose (104) planes are normal to the Al₂O₃ c axis. However, the Bi₄Ti ₃O₁₂ film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi₄Ti₃O₁₂(104) and the Al₂O₃(0001) planes.

Original language	English
Pages (from-to)	2780-2782
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	22
DOIs	https://doi.org/10.1063/1.112561
State	Published - 1994

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title = "Growth of highly oriented Bi4Ti3O12(104) thin films on Al2O3(0001) substrates using pulsed laser deposition",

abstract = "Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on Al2O3(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi4Ti3O 12 growth behaviors were investigated. It is possible to grow a Bi4Ti3O12 film whose (104) planes are normal to the Al2O3 c axis. However, the Bi4Ti 3O12 film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi4Ti3O12(104) and the Al2O3(0001) planes.",

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N2 - Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on Al2O3(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi4Ti3O 12 growth behaviors were investigated. It is possible to grow a Bi4Ti3O12 film whose (104) planes are normal to the Al2O3 c axis. However, the Bi4Ti 3O12 film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi4Ti3O12(104) and the Al2O3(0001) planes.

AB - Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on Al2O3(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi4Ti3O 12 growth behaviors were investigated. It is possible to grow a Bi4Ti3O12 film whose (104) planes are normal to the Al2O3 c axis. However, the Bi4Ti 3O12 film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi4Ti3O12(104) and the Al2O3(0001) planes.

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Growth of highly oriented Bi4Ti3O12(104) thin films on Al2O3(0001) substrates using pulsed laser deposition

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Growth of highly oriented Bi₄Ti₃O₁₂(104) thin films on Al₂O₃(0001) substrates using pulsed laser deposition