Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on Al2O3(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi4Ti3O 12 growth behaviors were investigated. It is possible to grow a Bi4Ti3O12 film whose (104) planes are normal to the Al2O3 c axis. However, the Bi4Ti 3O12 film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi4Ti3O12(104) and the Al2O3(0001) planes.