Growth and optical characteristics of high-quality ZnO thin films on graphene layers

Suk In Park; Youngbin Tchoe; Hyeonjun Baek; Jaehyuk Heo; Jerome K. Hyun; Janghyun Jo; Miyoung Kim; Nam Jung Kim; Gyu Chul Yi

doi:10.1063/1.4905488

Growth and optical characteristics of high-quality ZnO thin films on graphene layers

Suk In Park, Youngbin Tchoe, Hyeonjun Baek, Jaehyuk Heo, Jerome K. Hyun, Janghyun Jo, Miyoung Kim, Nam Jung Kim, Gyu Chul Yi

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm² at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

Original language	English
Article number	016103
Journal	APL Materials
Volume	3
Issue number	1
DOIs	https://doi.org/10.1063/1.4905488
State	Published - 1 Jan 2015

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title = "Growth and optical characteristics of high-quality ZnO thin films on graphene layers",

abstract = "We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.",

author = "Park, {Suk In} and Youngbin Tchoe and Hyeonjun Baek and Jaehyuk Heo and Hyun, {Jerome K.} and Janghyun Jo and Miyoung Kim and Kim, {Nam Jung} and Yi, {Gyu Chul}",

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T1 - Growth and optical characteristics of high-quality ZnO thin films on graphene layers

AU - Park, Suk In

AU - Tchoe, Youngbin

AU - Baek, Hyeonjun

AU - Heo, Jaehyuk

AU - Hyun, Jerome K.

AU - Jo, Janghyun

AU - Kim, Miyoung

AU - Kim, Nam Jung

AU - Yi, Gyu Chul

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

AB - We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

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VL - 3

JO - APL Materials

JF - APL Materials

IS - 1

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ER -

Growth and optical characteristics of high-quality ZnO thin films on graphene layers

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