Graphene Field-Effect Transistor on a Calcium Fluoride Substrate

Tuan Khanh Chau; Dongseok Suh

doi:10.3938/jkps.77.879

Graphene Field-Effect Transistor on a Calcium Fluoride Substrate

Tuan Khanh Chau, Dongseok Suh

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report the electrical-transport properties of a monolayer graphene device put on a 500 µm-thick calcium fluoride (CaF₂) single-crystal substrate. From the gate-voltage dependence, clear n-type behavior was observed in a graphene/CaF₂ field-effect transistor. This can be understood on the basis of the strong interaction between graphene and the CaF₂ substrate, where the substantial electron wavefunction overlap between graphene and fluorine atoms of CaF₂ occurs. This observation indicates that the strong n-type doping to graphene is possible only through the contact of graphene with the fluorinated substrate due to the strong electron affinity of a fluorine atom. Various electrical and optical characterizations for the graphene on CaF₂ substrates are provided.

Original language	English
Pages (from-to)	879-883
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	77
Issue number	10
DOIs	https://doi.org/10.3938/jkps.77.879
State	Published - Nov 2020

Bibliographical note

Funding Information:
This study was supported by the Korea Electric Power Corporation (No. R18XA06-54), and the Global Research & Development Center Program (No. 2018K1A4A3A01064272) through the NRF funded by the Ministry of Science and ICT, Republic of Korea.

Publisher Copyright:
© 2020, The Korean Physical Society.

Keywords

CaF
CVD graphene
Dielectric constant
Electrical transport
Field effect transistor

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10.3938/jkps.77.879

Cite this

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abstract = "We report the electrical-transport properties of a monolayer graphene device put on a 500 µm-thick calcium fluoride (CaF2) single-crystal substrate. From the gate-voltage dependence, clear n-type behavior was observed in a graphene/CaF2 field-effect transistor. This can be understood on the basis of the strong interaction between graphene and the CaF2 substrate, where the substantial electron wavefunction overlap between graphene and fluorine atoms of CaF2 occurs. This observation indicates that the strong n-type doping to graphene is possible only through the contact of graphene with the fluorinated substrate due to the strong electron affinity of a fluorine atom. Various electrical and optical characterizations for the graphene on CaF2 substrates are provided.",

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N2 - We report the electrical-transport properties of a monolayer graphene device put on a 500 µm-thick calcium fluoride (CaF2) single-crystal substrate. From the gate-voltage dependence, clear n-type behavior was observed in a graphene/CaF2 field-effect transistor. This can be understood on the basis of the strong interaction between graphene and the CaF2 substrate, where the substantial electron wavefunction overlap between graphene and fluorine atoms of CaF2 occurs. This observation indicates that the strong n-type doping to graphene is possible only through the contact of graphene with the fluorinated substrate due to the strong electron affinity of a fluorine atom. Various electrical and optical characterizations for the graphene on CaF2 substrates are provided.

AB - We report the electrical-transport properties of a monolayer graphene device put on a 500 µm-thick calcium fluoride (CaF2) single-crystal substrate. From the gate-voltage dependence, clear n-type behavior was observed in a graphene/CaF2 field-effect transistor. This can be understood on the basis of the strong interaction between graphene and the CaF2 substrate, where the substantial electron wavefunction overlap between graphene and fluorine atoms of CaF2 occurs. This observation indicates that the strong n-type doping to graphene is possible only through the contact of graphene with the fluorinated substrate due to the strong electron affinity of a fluorine atom. Various electrical and optical characterizations for the graphene on CaF2 substrates are provided.

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KW - Electrical transport

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Graphene Field-Effect Transistor on a Calcium Fluoride Substrate

Abstract

Bibliographical note

Keywords

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