Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

Suhyun Bang, Min Hwi Kim, Tae Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

In this work, we investigated the gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si resistive-switching random-access memory (RRAM) device. We fabricated the RRAM cells with Cu as the top electrode (TE) and heavily doped p-type silicon as the bottom electrode (BE), and amorphous indium gallium zinc oxide (α-IGZO) film as the switching layer. In particular, we developed a bilayer IGZO film consisting of an oxygen-deficient layer and an oxygen-rich one by controlling the oxygen concentrations in the respective switching layers in the expectation of gradual switching owing to an oxygen vacancy reservoir. Fabricated RRAM cells successfully showed the typical hysteretic I–V curves including SET and RESET operations in the DC sweep mode. Furthermore, gradual switching and self-rectifying performances were observed. These characteristics are suitable to applications for synaptic devices toward the advanced neuromorphic systems.

Original languageEnglish
Pages (from-to)60-65
Number of pages6
JournalSolid-State Electronics
Volume150
DOIs
StatePublished - Dec 2018

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) ( 2018R1A2A1A05023517 ) and also supported in part by the Brain Korea 21 Plus Program in 2018 .

Publisher Copyright:
© 2018

Keywords

  • Amorphous indium gallium zinc oxide
  • Gradual switching
  • Resistive-switching random-access memory
  • Self-rectification
  • Synaptic device

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