Abstract
A new class of low noise CMOS common gate transimpedance amplifier is described. What is novel about the design is the total isolation of the photodiode capacitance from determining the -3dB bandwidth. HSPICE simulations of this amplifier were conducted using the Tritech 0.6μm CMOS process. Simulated performance gives 2GHz bandwidth, 1.13K Ω transimpedance gain and very low input noise current. In addition, a regulated cascoded transimpedance amplifier is also presented. The low input impedance characteristic is exploited to get wide bandwidth. Simulation gives 4GHz bandwidth, 47dB gain and low input noise current, particularly at high frequencies.
| Original language | English |
|---|---|
| Pages (from-to) | 209-212 |
| Number of pages | 4 |
| Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
| Volume | 1 |
| State | Published - 1997 |
| Event | Proceedings of the 1997 IEEE International Symposium on Circuits and Systems, ISCAS'97. Part 4 (of 4) - Hong Kong, Hong Kong Duration: 9 Jun 1997 → 12 Jun 1997 |