Gigahertz low noise CMOS transimpedance amplifier

S. M. Park, C. Toumazou

Research output: Contribution to journalConference articlepeer-review

32 Scopus citations


A new class of low noise CMOS common gate transimpedance amplifier is described. What is novel about the design is the total isolation of the photodiode capacitance from determining the -3dB bandwidth. HSPICE simulations of this amplifier were conducted using the Tritech 0.6μm CMOS process. Simulated performance gives 2GHz bandwidth, 1.13K Ω transimpedance gain and very low input noise current. In addition, a regulated cascoded transimpedance amplifier is also presented. The low input impedance characteristic is exploited to get wide bandwidth. Simulation gives 4GHz bandwidth, 47dB gain and low input noise current, particularly at high frequencies.

Original languageEnglish
Pages (from-to)209-212
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
StatePublished - 1997
EventProceedings of the 1997 IEEE International Symposium on Circuits and Systems, ISCAS'97. Part 4 (of 4) - Hong Kong, Hong Kong
Duration: 9 Jun 199712 Jun 1997


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