Gigabit CMOS transimpedance amplifiers for optical communication applications

Sung Min Park

Gigabit CMOS transimpedance amplifiers for optical communication applications

Sung Min Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A number of gigabit transimpedance amplifiers are realized in submicron CMOS technologies. By exploiting regulated cascode (RGC) configuration for the input stage, the amplifiers efficiently isolate the large input parasitic capacitance and hence achieve significant bandwidth improvement. A 1.25-Gb/s RGC TIA demonstrates 950 MHz bandwidth for O.5 pF photodiode capacitance and the only 93 MHz difference even for 1 pF photodiode capacitance. Also, a 2.5-Gb/s RGC TIA realized in a 0.6 μm CMOS technology demonstrates 2.2 GHz bandwidth for O.5 pF photodiode capacitance, confirming the RGC mechanism. In addition, a differential RGC TIA is realized in a 0.25 μm CMOS technology. Optical measurements clearly show 1.25-Gb/s operation for 1 pF photodiode capacitance with 80 dBΩ transimpedance gain.

Original language	English
Title of host publication	Proceedings - KORUS 2003
Subtitle of host publication	7th Korea-Russia International Symposium on Science and Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	211-215
Number of pages	5
ISBN (Electronic)	8978686184, 9788978686181
State	Published - 2003
Event	7th Korea-Russia International Symposium on Science and Technology, KORUS 2003 - Ulsan, Korea, Republic of Duration: 28 Jun 2003 → 6 Jul 2003

Publication series

Name	Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology
Volume	2

Conference

Conference	7th Korea-Russia International Symposium on Science and Technology, KORUS 2003
Country/Territory	Korea, Republic of
City	Ulsan
Period	28/06/03 → 6/07/03

Keywords

Bandwidth
Capacitance measurement
CMOS technology
Gain measurement
Isolation technology
Optical amplifiers
Optical fiber communication
Parasitic capacitance
Photodiodes
Semiconductor optical amplifiers

Cite this

Park, S. M. (2003). Gigabit CMOS transimpedance amplifiers for optical communication applications. In Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology (pp. 211-215). [1222607] (Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology; Vol. 2). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{140ad1754ede42f1b543da29000944c8,

title = "Gigabit CMOS transimpedance amplifiers for optical communication applications",

abstract = "A number of gigabit transimpedance amplifiers are realized in submicron CMOS technologies. By exploiting regulated cascode (RGC) configuration for the input stage, the amplifiers efficiently isolate the large input parasitic capacitance and hence achieve significant bandwidth improvement. A 1.25-Gb/s RGC TIA demonstrates 950 MHz bandwidth for O.5 pF photodiode capacitance and the only 93 MHz difference even for 1 pF photodiode capacitance. Also, a 2.5-Gb/s RGC TIA realized in a 0.6 μm CMOS technology demonstrates 2.2 GHz bandwidth for O.5 pF photodiode capacitance, confirming the RGC mechanism. In addition, a differential RGC TIA is realized in a 0.25 μm CMOS technology. Optical measurements clearly show 1.25-Gb/s operation for 1 pF photodiode capacitance with 80 dBΩ transimpedance gain.",

keywords = "Bandwidth, Capacitance measurement, CMOS technology, Gain measurement, Isolation technology, Optical amplifiers, Optical fiber communication, Parasitic capacitance, Photodiodes, Semiconductor optical amplifiers",

author = "Park, {Sung Min}",

note = "Publisher Copyright: {\textcopyright} 2003 7th Korea-Russia Intl Sym on Science.; 7th Korea-Russia International Symposium on Science and Technology, KORUS 2003 ; Conference date: 28-06-2003 Through 06-07-2003",

year = "2003",

language = "English",

series = "Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "211--215",

booktitle = "Proceedings - KORUS 2003",

}

Park, SM 2003, Gigabit CMOS transimpedance amplifiers for optical communication applications. in Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology., 1222607, Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 211-215, 7th Korea-Russia International Symposium on Science and Technology, KORUS 2003, Ulsan, Korea, Republic of, 28/06/03.

Gigabit CMOS transimpedance amplifiers for optical communication applications. / Park, Sung Min.
Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology. Institute of Electrical and Electronics Engineers Inc., 2003. p. 211-215 1222607 (Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Gigabit CMOS transimpedance amplifiers for optical communication applications

AU - Park, Sung Min

PY - 2003

Y1 - 2003

N2 - A number of gigabit transimpedance amplifiers are realized in submicron CMOS technologies. By exploiting regulated cascode (RGC) configuration for the input stage, the amplifiers efficiently isolate the large input parasitic capacitance and hence achieve significant bandwidth improvement. A 1.25-Gb/s RGC TIA demonstrates 950 MHz bandwidth for O.5 pF photodiode capacitance and the only 93 MHz difference even for 1 pF photodiode capacitance. Also, a 2.5-Gb/s RGC TIA realized in a 0.6 μm CMOS technology demonstrates 2.2 GHz bandwidth for O.5 pF photodiode capacitance, confirming the RGC mechanism. In addition, a differential RGC TIA is realized in a 0.25 μm CMOS technology. Optical measurements clearly show 1.25-Gb/s operation for 1 pF photodiode capacitance with 80 dBΩ transimpedance gain.

AB - A number of gigabit transimpedance amplifiers are realized in submicron CMOS technologies. By exploiting regulated cascode (RGC) configuration for the input stage, the amplifiers efficiently isolate the large input parasitic capacitance and hence achieve significant bandwidth improvement. A 1.25-Gb/s RGC TIA demonstrates 950 MHz bandwidth for O.5 pF photodiode capacitance and the only 93 MHz difference even for 1 pF photodiode capacitance. Also, a 2.5-Gb/s RGC TIA realized in a 0.6 μm CMOS technology demonstrates 2.2 GHz bandwidth for O.5 pF photodiode capacitance, confirming the RGC mechanism. In addition, a differential RGC TIA is realized in a 0.25 μm CMOS technology. Optical measurements clearly show 1.25-Gb/s operation for 1 pF photodiode capacitance with 80 dBΩ transimpedance gain.

KW - Bandwidth

KW - Capacitance measurement

KW - CMOS technology

KW - Gain measurement

KW - Isolation technology

KW - Optical amplifiers

KW - Optical fiber communication

KW - Parasitic capacitance

KW - Photodiodes

KW - Semiconductor optical amplifiers

UR - http://www.scopus.com/inward/record.url?scp=4344621101&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:4344621101

T3 - Proceedings - KORUS 2003: 7th Korea-Russia International Symposium on Science and Technology

SP - 211

EP - 215

BT - Proceedings - KORUS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th Korea-Russia International Symposium on Science and Technology, KORUS 2003

Y2 - 28 June 2003 through 6 July 2003

ER -

Gigabit CMOS transimpedance amplifiers for optical communication applications

Abstract

Publication series

Conference

Keywords

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