Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions

Soohong Kim; Iksu Byun; Inrok Hwang; Jinsoo Kim; Jinsik Choi; Bae Ho Park; Sunae Seo; Myoung Jae Lee; David H. Seo; Dong Seok Suh; Yong Soo Joung; In Kyeong Yoo

doi:10.1143/JJAP.44.L345

Giant and stable conductivity switching behaviors in ZrO₂ films deposited by pulsed laser depositions

Soohong Kim
, Iksu Byun
, Inrok Hwang
, Jinsoo Kim
, Jinsik Choi
, Bae Ho Park
, Sunae Seo
, Myoung Jae Lee
, David H. Seo
, Dong Seok Suh
, Yong Soo Joung
, In Kyeong Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

ZrO₂ films have been deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 10⁶ and switching endurance of 10⁵ times are observed in a typical Pt/ZrO ₂/Pt structure. The Pt/ZrO₂/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

Original language	English
Pages (from-to)	L345-L347
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	8-11
DOIs	https://doi.org/10.1143/JJAP.44.L345
State	Published - 2005

Keywords

Conductivity switching
Endurance
On/off ratio
Schottky-type conduction
ZrO thin films

Access to Document

10.1143/JJAP.44.L345

Cite this

@article{c5b8807597bb4d0297090a3044ce2c24,

title = "Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions",

abstract = "ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO 2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.",

keywords = "Conductivity switching, Endurance, On/off ratio, Schottky-type conduction, ZrO thin films",

author = "Soohong Kim and Iksu Byun and Inrok Hwang and Jinsoo Kim and Jinsik Choi and Park, \{Bae Ho\} and Sunae Seo and Lee, \{Myoung Jae\} and Seo, \{David H.\} and Suh, \{Dong Seok\} and Joung, \{Yong Soo\} and Yoo, \{In Kyeong\}",

year = "2005",

doi = "10.1143/JJAP.44.L345",

language = "English",

volume = "44",

pages = "L345--L347",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "8-11",

}

TY - JOUR

T1 - Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions

AU - Kim, Soohong

AU - Byun, Iksu

AU - Hwang, Inrok

AU - Kim, Jinsoo

AU - Choi, Jinsik

AU - Park, Bae Ho

AU - Seo, Sunae

AU - Lee, Myoung Jae

AU - Seo, David H.

AU - Suh, Dong Seok

AU - Joung, Yong Soo

AU - Yoo, In Kyeong

PY - 2005

Y1 - 2005

N2 - ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO 2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

AB - ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO 2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

KW - Conductivity switching

KW - Endurance

KW - On/off ratio

KW - Schottky-type conduction

KW - ZrO thin films

UR - https://www.scopus.com/pages/publications/19944379530

U2 - 10.1143/JJAP.44.L345

DO - 10.1143/JJAP.44.L345

M3 - Article

AN - SCOPUS:19944379530

SN - 0021-4922

VL - 44

SP - L345-L347

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8-11