Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions

Soohong Kim; Iksu Byun; Inrok Hwang; Jinsoo Kim; Jinsik Choi; Bae Ho Park; Sunae Seo; Myoung Jae Lee; David H. Seo; Dong Seok Suh; Yong Soo Joung; In Kyeong Yoo

doi:10.1143/JJAP.44.L345

Giant and stable conductivity switching behaviors in ZrO₂ films deposited by pulsed laser depositions

Soohong Kim, Iksu Byun, Inrok Hwang, Jinsoo Kim, Jinsik Choi, Bae Ho Park, Sunae Seo, Myoung Jae Lee, David H. Seo, Dong Seok Suh, Yong Soo Joung, In Kyeong Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

ZrO₂ films have been deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 10⁶ and switching endurance of 10⁵ times are observed in a typical Pt/ZrO ₂/Pt structure. The Pt/ZrO₂/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

Original language	English
Pages (from-to)	L345-L347
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	8-11
DOIs	https://doi.org/10.1143/JJAP.44.L345
State	Published - 2005

Keywords

Conductivity switching
Endurance
On/off ratio
Schottky-type conduction
ZrO thin films

Access to Document

10.1143/JJAP.44.L345

Cite this

@article{c5b8807597bb4d0297090a3044ce2c24,

title = "Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions",

abstract = "ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO 2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.",

keywords = "Conductivity switching, Endurance, On/off ratio, Schottky-type conduction, ZrO thin films",

author = "Soohong Kim and Iksu Byun and Inrok Hwang and Jinsoo Kim and Jinsik Choi and Park, {Bae Ho} and Sunae Seo and Lee, {Myoung Jae} and Seo, {David H.} and Suh, {Dong Seok} and Joung, {Yong Soo} and Yoo, {In Kyeong}",

year = "2005",

doi = "10.1143/JJAP.44.L345",

language = "English",

volume = "44",

pages = "L345--L347",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "8-11",

}

TY - JOUR

T1 - Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions

AU - Kim, Soohong

AU - Byun, Iksu

AU - Hwang, Inrok

AU - Kim, Jinsoo

AU - Choi, Jinsik

AU - Park, Bae Ho

AU - Seo, Sunae

AU - Lee, Myoung Jae

AU - Seo, David H.

AU - Suh, Dong Seok

AU - Joung, Yong Soo

AU - Yoo, In Kyeong

PY - 2005

Y1 - 2005

N2 - ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO 2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

AB - ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO 2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

KW - Conductivity switching

KW - Endurance

KW - On/off ratio

KW - Schottky-type conduction

KW - ZrO thin films

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U2 - 10.1143/JJAP.44.L345

DO - 10.1143/JJAP.44.L345

M3 - Article

AN - SCOPUS:19944379530

SN - 0021-4922

VL - 44

SP - L345-L347

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8-11