Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect

Mina Yun; Seongjae Cho; Sae Kyoung Kang; Sunghun Jung; Byung Gook Park

doi:10.1109/ISCE.2015.7177834

Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect

Mina Yun, Seongjae Cho, Sae Kyoung Kang, Sunghun Jung, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, fabricated 1550-nm short-wavelength infrared (SWIR) Ge-on-Si photodetectors coupled with a Si waveguide on silicon-on-insulator (SOI) for on-chip optical interconnect as an energy-efficient green technology for next-generation very-large-scale integration (VLSI) systems are characterized. Here, a particular emphasis is put on the back-end-of-the-line (BEOL) technology in device design. Comparison study on the effects of interconnection geometry on the electrical and optical DC characteristics of the device is made. Compared with a reference device with bulk contacts, device with holey contacts demonstrated an increased optical responsivity. Further, device with holey contacts on two metal layers showed the highest photocurrent. Also, dependence of forward and reverse currents in the heterojunction pn diode on effective contact area is empirically studied. As a result, it is found that external quantum efficiency (EQE) can be significantly improved by engineering the geometry of metal interconnect in the Ge-on-Si photodetector without being affected by reduction in the effective contact area.

Original language	English
Title of host publication	2015 International Symposium on Consumer Electronics, ISCE 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467373654
DOIs	https://doi.org/10.1109/ISCE.2015.7177834
State	Published - 4 Aug 2015
Event	IEEE International Symposium on Consumer Electronics, ISCE 2015 - Madrid, Spain Duration: 24 Jun 2015 → 26 Jun 2015

Publication series

Name	Proceedings of the International Symposium on Consumer Electronics, ISCE
Volume	2015-August

Conference

Conference	IEEE International Symposium on Consumer Electronics, ISCE 2015
Country/Territory	Spain
City	Madrid
Period	24/06/15 → 26/06/15

Keywords

back-end-of-the-line
external quantum efficiency
Ge-on-Si photodetector
green technology
heterojunction pn diode
on-chip optical interconnect
optical responsivity
short-wavelength infrared
silicon-on-insulator
very-large-scale integration

Access to Document

10.1109/ISCE.2015.7177834

Cite this

Yun, M., Cho, S., Kang, S. K., Jung, S., & Park, B. G. (2015). Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect. In 2015 International Symposium on Consumer Electronics, ISCE 2015 Article 7177834 (Proceedings of the International Symposium on Consumer Electronics, ISCE; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCE.2015.7177834

@inproceedings{80e4d804992149d29a3b96cb545a36d6,

title = "Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect",

abstract = "In this work, fabricated 1550-nm short-wavelength infrared (SWIR) Ge-on-Si photodetectors coupled with a Si waveguide on silicon-on-insulator (SOI) for on-chip optical interconnect as an energy-efficient green technology for next-generation very-large-scale integration (VLSI) systems are characterized. Here, a particular emphasis is put on the back-end-of-the-line (BEOL) technology in device design. Comparison study on the effects of interconnection geometry on the electrical and optical DC characteristics of the device is made. Compared with a reference device with bulk contacts, device with holey contacts demonstrated an increased optical responsivity. Further, device with holey contacts on two metal layers showed the highest photocurrent. Also, dependence of forward and reverse currents in the heterojunction pn diode on effective contact area is empirically studied. As a result, it is found that external quantum efficiency (EQE) can be significantly improved by engineering the geometry of metal interconnect in the Ge-on-Si photodetector without being affected by reduction in the effective contact area.",

keywords = "back-end-of-the-line, external quantum efficiency, Ge-on-Si photodetector, green technology, heterojunction pn diode, on-chip optical interconnect, optical responsivity, short-wavelength infrared, silicon-on-insulator, very-large-scale integration",

author = "Mina Yun and Seongjae Cho and Kang, {Sae Kyoung} and Sunghun Jung and Park, {Byung Gook}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Symposium on Consumer Electronics, ISCE 2015 ; Conference date: 24-06-2015 Through 26-06-2015",

year = "2015",

month = aug,

day = "4",

doi = "10.1109/ISCE.2015.7177834",

language = "English",

series = "Proceedings of the International Symposium on Consumer Electronics, ISCE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 International Symposium on Consumer Electronics, ISCE 2015",

}

Yun, M, Cho, S, Kang, SK, Jung, S & Park, BG 2015, Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect. in 2015 International Symposium on Consumer Electronics, ISCE 2015., 7177834, Proceedings of the International Symposium on Consumer Electronics, ISCE, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., IEEE International Symposium on Consumer Electronics, ISCE 2015, Madrid, Spain, 24/06/15. https://doi.org/10.1109/ISCE.2015.7177834

Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect. / Yun, Mina; Cho, Seongjae; Kang, Sae Kyoung et al.
2015 International Symposium on Consumer Electronics, ISCE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7177834 (Proceedings of the International Symposium on Consumer Electronics, ISCE; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect

AU - Yun, Mina

AU - Cho, Seongjae

AU - Kang, Sae Kyoung

AU - Jung, Sunghun

AU - Park, Byung Gook

PY - 2015/8/4

Y1 - 2015/8/4

N2 - In this work, fabricated 1550-nm short-wavelength infrared (SWIR) Ge-on-Si photodetectors coupled with a Si waveguide on silicon-on-insulator (SOI) for on-chip optical interconnect as an energy-efficient green technology for next-generation very-large-scale integration (VLSI) systems are characterized. Here, a particular emphasis is put on the back-end-of-the-line (BEOL) technology in device design. Comparison study on the effects of interconnection geometry on the electrical and optical DC characteristics of the device is made. Compared with a reference device with bulk contacts, device with holey contacts demonstrated an increased optical responsivity. Further, device with holey contacts on two metal layers showed the highest photocurrent. Also, dependence of forward and reverse currents in the heterojunction pn diode on effective contact area is empirically studied. As a result, it is found that external quantum efficiency (EQE) can be significantly improved by engineering the geometry of metal interconnect in the Ge-on-Si photodetector without being affected by reduction in the effective contact area.

AB - In this work, fabricated 1550-nm short-wavelength infrared (SWIR) Ge-on-Si photodetectors coupled with a Si waveguide on silicon-on-insulator (SOI) for on-chip optical interconnect as an energy-efficient green technology for next-generation very-large-scale integration (VLSI) systems are characterized. Here, a particular emphasis is put on the back-end-of-the-line (BEOL) technology in device design. Comparison study on the effects of interconnection geometry on the electrical and optical DC characteristics of the device is made. Compared with a reference device with bulk contacts, device with holey contacts demonstrated an increased optical responsivity. Further, device with holey contacts on two metal layers showed the highest photocurrent. Also, dependence of forward and reverse currents in the heterojunction pn diode on effective contact area is empirically studied. As a result, it is found that external quantum efficiency (EQE) can be significantly improved by engineering the geometry of metal interconnect in the Ge-on-Si photodetector without being affected by reduction in the effective contact area.

KW - back-end-of-the-line

KW - external quantum efficiency

KW - Ge-on-Si photodetector

KW - green technology

KW - heterojunction pn diode

KW - on-chip optical interconnect

KW - optical responsivity

KW - short-wavelength infrared

KW - silicon-on-insulator

KW - very-large-scale integration

UR - http://www.scopus.com/inward/record.url?scp=84953307643&partnerID=8YFLogxK

U2 - 10.1109/ISCE.2015.7177834

DO - 10.1109/ISCE.2015.7177834

M3 - Conference contribution

AN - SCOPUS:84953307643

T3 - Proceedings of the International Symposium on Consumer Electronics, ISCE

BT - 2015 International Symposium on Consumer Electronics, ISCE 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Symposium on Consumer Electronics, ISCE 2015

Y2 - 24 June 2015 through 26 June 2015

ER -

Yun M, Cho S, Kang SK, Jung S, Park BG. Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect. In 2015 International Symposium on Consumer Electronics, ISCE 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7177834. (Proceedings of the International Symposium on Consumer Electronics, ISCE). doi: 10.1109/ISCE.2015.7177834

Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Cite this