Ge-on-si photodetector with enhanced optical responsivity by advanced metallization geometry

Seongjae Cho, Stanley S. Cheung, Yung Hun Jung, Sae Kyoung Kang, Dal Ho Lee, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


—In this study, a 1550-nm Ge-on-Si photodetector coupled with a Si waveguide on silicon-on-insulator (SOI) platform has been fabricated and characterized with a particular emphasis on the back-end-of-the-line (BEOL) process. A comparison study of the effects of different metallization schemes on the responsivity has been conducted. Compared to the photodetector with a bulk metal contact, those with single-layered and double-layered contact-hole arrays demonstrated improvements in the optical responsivity at an operating voltage of 1 V. Especially, double-layer scheme showed prominent increase in photon-induced current without significant increase in dark current.

Original languageEnglish
Pages (from-to)366-371
Number of pages6
JournalJournal of Semiconductor Technology and Science
Issue number4
StatePublished - Aug 2020

Bibliographical note

Publisher Copyright:
© 2020, Institute of Electronics Engineers of Korea. All rights reserved.


  • Back-end-of-the-line
  • Germanium-on-silicon
  • Index Terms—Photodetector
  • Metallization scheme
  • Optical responsivity
  • Silicon-on-insulator


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