@inproceedings{eebc432e3853409487468aac8cd89827,
title = "Gated Twin-Bit (GTB) nonvolatile memory device and its operation",
abstract = "In this study, a nonvolatile memory (NVM) device with a novel 3-dimensional structure is introduced. The device is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between pillars can be removed and additional gates called cut-off gates help the operation. In this sense, GTB NVM device is considered as the ultimate form of 3-D nonvolatile memory device based on double-gate structure. Also, the operation is validated by simulation works.",
author = "Seongjae Cho and Park, \{Il Han\} and Lee, \{Jung Hoon\} and Yun, \{Jang Gn\} and Kim, \{Doo Hyun\} and Lee, \{Gil Sung\} and Hyungcheol Shin and Lee, \{Jong Duk\} and Park, \{Byung Gook\}",
year = "2008",
doi = "10.1109/SNW.2008.5418396",
language = "English",
isbn = "9781424420711",
series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",
booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",
note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",
}