In this study, a nonvolatile memory (NVM) device with a novel 3-dimensional structure is introduced. The device is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between pillars can be removed and additional gates called cut-off gates help the operation. In this sense, GTB NVM device is considered as the ultimate form of 3-D nonvolatile memory device based on double-gate structure. Also, the operation is validated by simulation works.